Attributes

Key Value
Base Product NumberSIHH21
CategoryDiscrete Semiconductor .
Current - Continuous Dr.19A (Tc)
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .86 nC @ 10 V
Input Capacitance (Ciss.2035 pF @ 100 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Power Dissipation (Max)174W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs185mOhm @ 11A, 10V
Series-
Supplier Device PackagePowerPAK? 8 x 8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4V @ 250?A
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