Attributes

Key Value
Base Product NumberSIR124
CategoryDiscrete Semiconductor .
Current - Continuous Dr.16.1A (Ta), 56.8A (Tc)
Drain to Source Voltage.80 V
Drive Voltage (Max Rds .7.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .40 nC @ 10 V
Input Capacitance (Ciss.1666 pF @ 40 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? SO-8
Power Dissipation (Max)5W (Ta), 62.5W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs8.4mOhm @ 10A, 10V
SeriesTrenchFET? Gen IV
Supplier Device PackagePowerPAK? SO-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.8V @ 250?A
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