Attributes

Key Value
Base Product NumberNTP082
CategoryDiscrete Semiconductor .
Current - Continuous Dr.40A (Tc)
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .81 nC @ 10 V
Input Capacitance (Ciss.3410 pF @ 400 V
Mfronsemi
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)313W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs82mOhm @ 20A, 10V
SeriesFRFET?, SuperFET? II
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 4mA
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