STMicroelectronics STB6N60M2

mpnSTB6N60M2
brandname: STMicroelectronics
manufacturername: STMicroelectronics

Attributes

Key	Value
Base Product Number	STB6N60
Category	Discrete Semiconductor .
Current - Continuous Dr.	4.5A (Tc)
Drain to Source Voltage.	600V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	8nC @ 10V
Input Capacitance (Ciss.	232pF @ 100V
Mfr	STMicroelectronics
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-263-3, D?Pak (2 Lead.
Part Status	Active
Power Dissipation (Max)	60W (Tc)
Rds On (Max) @ Id, Vgs	1.2Ohm @ 2.25A, 10V
Series	MDmesh? II Plus
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?25V
Vgs(th) (Max) @ Id	4V @ 250?A

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