Attributes

Key Value
Base Product NumberNTB12
CategoryDiscrete Semiconductor .
Current - Continuous Dr.95A (Ta), 120.5A (Tc)
Drain to Source Voltage.24 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .28 nC @ 4.5 V
Input Capacitance (Ciss.3440 pF @ 20 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-263-3, D?Pak (2 Lead.
Part StatusObsolete
Power Dissipation (Max)1.98W (Ta), 113.6W (Tc)
Rds On (Max) @ Id, Vgs4.6mOhm @ 20A, 10V
Series-
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2V @ 250?A
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