mpn
SIE882DF-T1-GE3
brand
name: Vishay Siliconix
manufacturer
name: Vishay Siliconix
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
4.5V, 10V
Drain to Source Voltage.
145 nC @ 10 V
Drive Voltage (Max Rds .
1.4mOhm @ 20A, 10V
FET Feature
5.2W (Ta), 125W (Tc)
FET Type
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .
6400 pF @ 12.5 V
Mfr
Vishay Siliconix
Mounting Type
10-PolarPAK? (L)
Operating Temperature
Surface Mount
Package
Active
Package / Case
25 V
Part Status
N-Channel
Power Dissipation (Max)
-55?C ~ 150?C (TJ)
Rds On (Max) @ Id, Vgs
2.2V @ 250?A
Series
Tape & Reel (TR)
Supplier Device Package
10-PolarPAK? (L)
Technology
60A (Tc)
Vgs (Max)
-
Vgs(th) (Max) @ Id
?20V