onsemi FQD6N60CTM-WS

mpnFQD6N60CTM-WS
brandname: onsemi
manufacturername: onsemi

Attributes

Key	Value
Base Product Number	FQD6N60
Category	Discrete Semiconductor .
Current - Continuous Dr.	4A (Tc)
Drain to Source Voltage.	600 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	20 nC @ 10 V
Input Capacitance (Ciss.	810 pF @ 25 V
Mfr	onsemi
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-252-3, DPak (2 Leads.
Power Dissipation (Max)	80W (Tc)
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	2Ohm @ 2A, 10V
Series	QFET?
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	4V @ 250?A

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