Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.9A (Ta), 50A (Tc)
Drain to Source Voltage.40 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .23 nC @ 4.5 V
Input Capacitance (Ciss.2767 pF @ 25 V
MfrPanjit International In.
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Part StatusActive
Power Dissipation (Max)2.4W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs12mOhm @ 10A, 10V
Series-
Supplier Device PackageTO-252
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 250?A
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