Vishay Siliconix SIE882DF-T1-GE3

mpnSIE882DF-T1-GE3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Base Product Number	SIE882
Category	Discrete Semiconductor .
Current - Continuous Dr.	60A (Tc)
Drain to Source Voltage.	25 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	145 nC @ 10 V
Input Capacitance (Ciss.	6400 pF @ 12.5 V
Mfr	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	10-PolarPAK? (L)
Power Dissipation (Max)	5.2W (Ta), 125W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	1.4mOhm @ 20A, 10V
Series	TrenchFET?
Supplier Device Package	10-PolarPAK? (L)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.2V @ 250?A

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