Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.8A (Ta)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET FeatureSchottky Diode (Body)
FET TypeN-Channel
Gate Charge (Qg) (Max) .18.5 nC @ 10 V
Input Capacitance (Ciss.1849 pF @ 15 V
MfrDiodes Incorporated
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm .
Power Dissipation (Max)1.54W (Ta)
Product StatusObsolete
Rds On (Max) @ Id, Vgs15mOhm @ 10.7A, 10V
Series-
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?12V
Vgs(th) (Max) @ Id2.3V @ 250?A
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