Infineon Technologies IPD80R2K7C3AATMA1

mpnIPD80R2K7C3AATMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Base Product Number	IPD80R2
Category	Discrete Semiconductor .
Current - Continuous Dr.	2A (Tc)
Drain to Source Voltage.	800 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	1.5 nC @ 10 V
Input Capacitance (Ciss.	290 pF @ 100 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-40?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-252-3, DPak (2 Leads.
Power Dissipation (Max)	42W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	2.7Ohm @ 1.2A, 10V
Series	Automotive, AEC-Q101, C.
Supplier Device Package	D-Pak
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3.9V @ 250?A

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