Attributes

Key Value
Base Product NumberMTB30
CategoryDiscrete Semiconductor .
Current - Continuous Dr.30A (Tc)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .80 nC @ 10 V
Input Capacitance (Ciss.2190 pF @ 25 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Part StatusObsolete
Power Dissipation (Max)3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs80mOhm @ 15A, 10V
Series-
Supplier Device PackageD?PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?15V
Vgs(th) (Max) @ Id4V @ 250?A
prev


As an Amazon Associate I earn from qualifying purchases.

1760174701.3552