Vishay SI4816BDY-T1-E3

B005T6TSFI

Vishay Dual N Channel Mosfet, 30V, Soic - SI4816BDY-T1-E3

Vishay Dual N Channel Mosfet, 30V, Soic - SI4816BDY-T1-E3zoom

Attributes

Key Value
Base Product NumberSI4816
CategoryDiscrete Semiconductor .
Current - Continuous Dr.5.8A, 8.2A
Drain Current5.8/8.2 A
Drain to Source On Resi.0.0185/0.0115 Ohms
Drain to Source Voltage.30V
FET FeatureLogic Level Gate
FET Type2 N-Channel (Half Bridg.
Forward Transconductance30/31 S
Forward Voltage, Diode1.1/0.5 V
Gate Charge (Qg) (Max) .10nC @ 5V
Gate to Source Voltage20 V
Input Capacitance (Ciss.-
Junction to Ambient The.100/82 ?C/W
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55 to 150 ?C, -55?C ~ .
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm .
Package TypeSO-8
Part StatusActive
PolarizationN-Channel
Power - Max1W, 1.25W
Power Dissipation1/1.25 W
Rds On (Max) @ Id, Vgs18.5mOhm @ 6.8A, 10V
SeriesSI48 Series, LITTLE FOO.
Supplier Device Package8-SOIC
Total Gate Charge7.8/11.6 nC
Turn Off Delay Time24/31 ns
Turn On Delay Time11/13 ns
TypeDual Power
Vgs(th) (Max) @ Id3V @ 250?A
Voltage, Breakdown, Dra.30 V

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Win SourceSI4816BDY-T1-E30.5599015000Vishay0.559 @ 90
thumbzoomNewark73W94130.726250010VISHAY0.726 @ 2500
us.rs-online.com700263611.02110Siliconix / Vishay1.02 @ 10
Future Electronics94903761.332131450Vishay1.332 @ 10
Digi-Key17648121.77675100010Vishay Siliconix1.77675 @ 10
AmazonTPB00NYLFS4K15.641102VISHAY SILICONIX15.64 @ 10
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