- mpnSI4816BDY-T1-E3
- brandname: Siliconix / Vishay
- manufacturername: Siliconix / Vishay
Vishay Dual N Channel Mosfet, 30V, Soic - SI4816BDY-T1-E3


- Brand: Vishay
- PartNumber: SI4816BDY-T1-E3
- PackageQuantity: 1
- Manufacturer: Vishay
- Label: Vishay
Attributes
Key | Value |
---|
Base Product Number | SI4816 |
Category | Discrete Semiconductor . |
Current - Continuous Dr. | 5.8A, 8.2A |
Drain Current | 5.8/8.2 A |
Drain to Source On Resi. | 0.0185/0.0115 Ohms |
Drain to Source Voltage. | 30V |
FET Feature | Logic Level Gate |
FET Type | 2 N-Channel (Half Bridg. |
Forward Transconductance | 30/31 S |
Forward Voltage, Diode | 1.1/0.5 V |
Gate Charge (Qg) (Max) . | 10nC @ 5V |
Gate to Source Voltage | 20 V |
Input Capacitance (Ciss. | - |
Junction to Ambient The. | 100/82 ?C/W |
Mfr | Vishay Siliconix |
Mounting Type | Surface Mount |
Operating Temperature | -55 to 150 ?C, -55?C ~ . |
Package | Tape & Reel (TR) |
Package / Case | 8-SOIC (0.154", 3.90mm . |
Package Type | SO-8 |
Part Status | Active |
Polarization | N-Channel |
Power - Max | 1W, 1.25W |
Power Dissipation | 1/1.25 W |
Rds On (Max) @ Id, Vgs | 18.5mOhm @ 6.8A, 10V |
Series | SI48 Series, LITTLE FOO. |
Supplier Device Package | 8-SOIC |
Total Gate Charge | 7.8/11.6 nC |
Turn Off Delay Time | 24/31 ns |
Turn On Delay Time | 11/13 ns |
Type | Dual Power |
Vgs(th) (Max) @ Id | 3V @ 250?A |
Voltage, Breakdown, Dra. | 30 V |
All Prices
Img | Seller | Supplier SKU | Min Price | MOQ | In Stock | Lead Time | Brand | Weight | Preferred Tier |
---|
| Win Source | SI4816BDY-T1-E3 | 0.559 | 90 | 15000 | | Vishay | | 0.559 @ 90 |
  | Newark | 73W9413 | 0.726 | 2500 | 10 | | VISHAY | | 0.726 @ 2500 |
| us.rs-online.com | 70026361 | 1.02 | 1 | 10 | | Siliconix / Vishay | | 1.02 @ 10 |
| Future Electronics | 9490376 | 1.332 | 1 | 31450 | | Vishay | | 1.332 @ 10 |
| Digi-Key | 1764812 | 1.77675 | 1000 | 10 | | Vishay Siliconix | | 1.77675 @ 10 |
| AmazonTP | B00NYLFS4K | 15.64 | 1 | 10 | 2 | VISHAY SILICONIX | | 15.64 @ 10 |