DIODES DMN62D0LFB-7

B0748LR333

DIODES DMN62D0LFB-7 DMN62D0LFB Series 60 V 100 mA N-Channel Enhancement Mode Mosfet - X1-DFN1006-3 - 3000 item(s)

DIODES DMN62D0LFB-7 DMN62D0LFB Series 60 V 100 mA N-Channel Enhancement Mode Mosfet - X1-DFN1006-3 - 3000 item(s)zoom

Attributes

Key Value
Base Product NumberDMN62
CaseX1-DFN1006-3
CategoryDiscrete Semiconductor .
Current - Continuous Dr.100mA (Ta)
Drain current75mA
Drain to Source Voltage.60 V
Drain-source voltage60V
Drive Voltage (Max Rds .1.5V, 4V
FET Feature-
FET TypeN-Channel
Gate charge900pC
Gate Charge (Qg) (Max) .0.45 nC @ 4.5 V
Gate-source voltage?20V
Input Capacitance (Ciss.32 pF @ 25 V
Kind of channelenhanced
Kind of packagereel,
ManufacturerDiodes Incorporated
MfrDiodes Incorporated
MountingSMD
Mounting TypeSurface Mount
On-state resistance3?
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case3-UFDFN
Polarisationunipolar
Power dissipation500mW
Power Dissipation (Max)470mW (Ta)
Product StatusActive
Pulsed drain current1A
Rds On (Max) @ Id, Vgs2Ohm @ 100mA, 4V
Series-
Supplier Device PackageX1-DFN1006-3
TechnologyMOSFET (Metal Oxide)
Type of transistorN-MOSFET
Vgs (Max)?20V
Vgs(th) (Max) @ Id1V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
VericalDMN62D0LFB-70.0653000270000Diodes Inc.0.065 @ 3000
AvnetDMN62D0LFB-70.0678730003000Diodes Inc.0.06787 @ 3000
Avnet AsiaDMN62D0LFB-70.07530003000Diodes Inc.0.075 @ 3000
TMEDMN62D0LFB-70.08453000DIODES INCORPORATED0.084 @ 3000
Future Electronics20553890.0844830003000Diodes Incorporated0.08448 @ 3000
Mouser621-DMN62D0LFB-70.10313000Diodes Inc.0.103 @ 3000
thumbzoomNewark28AK86330.11853000DIODES INC.0.118 @ 3000
Digi-Key82838680.119542513000Diodes Incorporated0.1195425 @ 3000
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