Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.48A (Tc)
Drain to Source Voltage.60V
Drive Voltage (Max Rds .5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .60nC @ 5V
Input Capacitance (Ciss.2000pF @ 25V
MfrON Semiconductor
Mounting TypeThrough Hole
Operating Temperature-65?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3
Part StatusActive
Power Dissipation (Max)100W (Tc)
Rds On (Max) @ Id, Vgs20mOhm @ 24A, 10V
Series-
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?16V
Vgs(th) (Max) @ Id2V @ 250?A
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