mpn
SIHB6N65E-GE3
brand
name: Vishay Siliconix
manufacturer
name: Vishay Siliconix
Attributes
Key
Value
Base Product Number
SIHB6
Category
Discrete Semiconductor .
Current - Continuous Dr.
7A (Tc)
Description
MOSFET N-CH 650V 7A D2P.
Detailed Description
N-Channel 650 V 7A (Tc).
Digi-Key Part Number
SIHB6N65E-GE3-ND
Drain to Source Voltage.
650 V
Drive Voltage (Max Rds .
10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
48 nC @ 10 V
Input Capacitance (Ciss.
820 pF @ 100 V
Manufacturer
Vishay Siliconix
Manufacturer Product Nu.
SIHB6N65E-GE3
Manufacturer Standard L.
69 Weeks
Mfr
Vishay Siliconix
Mounting Type
Surface Mount
Operating Temperature
-55?C ~ 150?C (TJ)
Package
Tube
Package / Case
TO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)
78W (Tc)
Product Status
Active
Rds On (Max) @ Id, Vgs
600mOhm @ 3A, 10V
Series
-
Supplier Device Package
D?PAK (TO-263)
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?30V
Vgs(th) (Max) @ Id
4V @ 250?A