Attributes

Key Value
Base Product NumberSUP60
CategoryDiscrete Semiconductor .
Current - Continuous Dr.60A (Tc)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .50 nC @ 4.5 V
Input Capacitance (Ciss.5950 pF @ 10 V
MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)3.75W (Ta), 120W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs4.5mOhm @ 20A, 10V
SeriesTrenchFET?
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3V @ 250?A
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