NXP Semiconductors . PMDPB38UNE,115
Gallery
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| PMDPB38UNE115 | 77975 | 1 @ $0.33, 25 @ $0.30, 100 @ $0.29, 500 @ $0.28, 1000 @ $0.27 | |||
| Digi-Key | 4020963 | 1 | 1 | 3606 @ $0.08 | |
| Digi-Key | 11549287 | 1 | 1 | 3606 @ $0.08 | |
 Digi-Key | 568-10757-1-ND | 1 | 1 | ||
| Hotenda | H1802491 | 1 | 1 | ||
| Digi-Key | 4386342 | 1 | 1 | 3606 @ $0.08 | |
| Newark | 70W0364 | 1 | 1 |
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MOSFET (10 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 5 A Rds On - Drain-Source Resistance: 38 mOhms Configuration: Dual Vgs th - Gate-Source Threshold Voltage: 0.7 V Qg - Gate Charge: 2.9 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 6.25 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | PMDPB38UNE,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET (100 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 5 A Rds On - Drain-Source Resistance: 38 mOhms Configuration: Dual Vgs th - Gate-Source Threshold Voltage: 0.7 V Qg - Gate Charge: 2.9 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 6.25 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | PMDPB38UNE,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET (5 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 5 A Rds On - Drain-Source Resistance: 38 mOhms Configuration: Dual Vgs th - Gate-Source Threshold Voltage: 0.7 V Qg - Gate Charge: 2.9 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 6.25 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | PMDPB38UNE,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET (50 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 5 A Rds On - Drain-Source Resistance: 38 mOhms Configuration: Dual Vgs th - Gate-Source Threshold Voltage: 0.7 V Qg - Gate Charge: 2.9 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 6.25 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | PMDPB38UNE,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET (1 piece)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 5 A Rds On - Drain-Source Resistance: 38 mOhms Configuration: Dual Vgs th - Gate-Source Threshold Voltage: 0.7 V Qg - Gate Charge: 2.9 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 6.25 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | PMDPB38UNE,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |