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Nexperia Mosfet Transistor, Dual N Channel, 200 Ma, 20 V, 0.28 Ohm, 4.5 V, 700 Mv Rohs Compliant: Yes - PMGD280UN,115

NEXPERIA . PMGD280UN,115

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Attributes

Brand name, Manufacturer nameNEXPERIA
Manufacturer, Brand, Label, Man, Publisher, StudioNEXPERIA NXP NXP Semiconductors
CategoryL1Semiconductors - Discretes
CategoryL2FETs
CategoryL3Dual MOSFETs
Extra Product NameNexperia Mosfet Transistor, Dual N Channel, 200 Ma, 20 V, 0.28 Ohm, 4.5 V, 700 Mv Rohs Compliant: Yes - PMGD280UN,115
jsonUrlDataSemiconductors - Discretes > FETs > Dual MOSFETs
moq, multiple5
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tierPrice10.395
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tierPrice50.137
tierPrice60.127
tierPrice70.115
tierPrice80.105
urlhttps://www.newark.com/34R4571?CMP=AFC-DATAALCHEMY
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AdultProduct, Autographed, Memorabilia, TradeInEligibleFalse
AsinB00LWOXLVS B00LWOXOZ6 B00LWOXT92 B00LWOXWHG B00LWOXZQE B00LWOY2OS B00M2E4XFK B011NN98DC B0731NJ353
Bullet_pointChannelType: Dual N-Ch Drain-sourceOnResistance-Max: 660 m?RatedPowerDissipation(P): 0.4 W; QgGateCharge: 0.89 nC; GateSourceVoltageMax: 8 V; DrainCurrent-Max(ID): 0.87 A; Turn-onTime-Nom(ton): 4.5 ns; Turn-offTime-Nom(toff): 18.5 ns; RiseTIme: 10 ns; FallTime: LowInputCapacitance: 45 pF Noofchannels: 2 VoltageDraintoSource: 20 V
Case1 10 100 1000 3000 5 50 500
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 771-PMGD280UN-T/R X1 MS 771-PMGD280UN-T/R X10 MS 771-PMGD280UN-T/R X100 MS 771-PMGD280UN-T/R X5 MS 771-PMGD280UN-T/R X50
ClassificationId306506011
DisplayNameIndustrial Electrical
Feature<b>Price For:</b> Pack of 5<b>Order Unit:</b> Tape & Reel Full\xa01 <b>Continuous Drain Current Id:</b>: 200 <b>Drain Source Voltage Vds:</b>: 20 <b>MSL:</b>: MSL 1 - Unlimited <b>No. of Pins:</b>: 6 <b>On Resistance Rds(on):</b>: 0.28 <b>Operating Temperature Max:</b>: 150 <b>Power Dissipation Pd:</b>: 400 <b>Rds(on) Test Voltage Vgs:</b>: 4.5 <b>SVHC:</b>: No SVHC (17-Dec-2014) <b>Threshold Voltage Vgs Typ:</b>: 700 <b>Transistor Case Style:</b>: SOT-363 ChannelType: Dual N-Ch Manufacturer: NXP Product Category: MOSFETs - Dual RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: +/- 8 V Id - Continuous Drain Current: 870 mA Rds On - Drain-Source Resistance: 280 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 400 mW Mounting Style: SMD/SMT Package / Case: SOT-363-6
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ItemClassificationBASE_PRODUCT
ItemName, Item_nameNEXPERIA PMGD280UN,115 Dual N-Channel 20 V 660 mOhm 0.89 nC 0.4 W Silicon SMT Mosfet - SOT-363 - 3000 item(s)
Item_type_keywordelectronic-components
Item_weight0.09
Linkhttps://m.media-amazon.com/images/I/21KeeYmuZ6L._SL75_.jpg https://m.media-amazon.com/images/I/21KeeYmuZ6L.jpg
Marketplace_idATVPDKIKX0DER
NumberOfItems3000 5
Number_of_items3000
PackageQuantity1 10 100 1000 5 50 500
ProductCategoryId306919011 biss_display_on_website
ProductGroupBISS BISS Basic
ProductType, ProductTypeNameELECTRONIC_COMPONENT
Product_descriptionDual N-Channel 20 V 660 mOhm 0.89 nC 0.4 W Silicon SMT Mosfet - SOT-363 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Product_site_launch_date2017-06-21T18:28:35.886Z
Rank2153027 2187
Size1 Piece 10 Piece 100 Piece 1000 Piece 5 Piece 5 pack 50 Piece 500 Piece
TitleMOSFET N-CH TRENCH DL 20V (1 piece) MOSFET N-CH TRENCH DL 20V (10 pieces) MOSFET N-CH TRENCH DL 20V (100 pieces) MOSFET N-CH TRENCH DL 20V (1000 pieces) MOSFET N-CH TRENCH DL 20V (5 pieces) MOSFET N-CH TRENCH DL 20V (50 pieces) MOSFET N-CH TRENCH DL 20V (500 pieces) NEXPERIA PMGD280UN,115 Dual N-Channel 20 V 660 mOhm 0.89 nC 0.4 W Silicon SMT Mosfet - SOT-363 - 3000 item(s) NXP PMGD280UN,115 MOSFET, N CH, TRENCH DL, 20V, SOT363 (5 pieces)
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Unitgrams pounds
Unitspixels pounds
VariantMAIN
WebsiteDisplayGroupbiss_basic_display_on_website
WebsiteDisplayGroupNameBISS Basic
Weight0.0001984160358 0.000625
Width323 75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark34R45715762551 @ $0.40, 10 @ $0.27, 25 @ $0.23, 50 @ $0.18, 100 @ $0.14, 250 @ $0.13, 500 @ $0.12, 1000 @ $0.10
TMEPMGD280UN.1153284833 @ $0.30, 25 @ $0.17, 100 @ $0.15, 500 @ $0.13, 3000 @ $0.12
Digi-Key949650113073911 @ $0.44, 10 @ $0.33, 100 @ $0.21, 500 @ $0.14, 1000 @ $0.11, 3000 @ $0.10, 6000 @ $0.09, 15000 @ $0.08, 30000 @ $0.08, 75000 @ $0.07
1SourcePMGD280UN,11511
RS Delivers725-832918011 @ $0.36
Win SourcePMGD280UN,115116433261
Digi-Key568-2365-1-ND111 @ $0.43, 10 @ $0.35, 100 @ $0.24, 500 @ $0.18, 1000 @ $0.13

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MOSFET N-CH TRENCH DL 20V (10 pieces)
Brand: NXP Semiconductors
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Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
Part numberPMGD280UN,115
LabelNXP Semiconductors
ManufacturerNXP Semiconductors
Catalog
FeatureManufacturer: NXP Product Category: MOSFETs - Dual RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: +/- 8 V Id - Continuous Drain Current: 870 mA Rds On - Drain-Source Resistance: 280 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 400 mW Mounting Style: SMD/SMT Package / Case: SOT-363-6
CategoryIndustrial & Scientific
MPNPMGD280UN,115
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerNXP Semiconductors
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MOSFET N-CH TRENCH DL 20V (100 pieces)
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ManufacturerNXP Semiconductors
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FeatureManufacturer: NXP Product Category: MOSFETs - Dual RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: +/- 8 V Id - Continuous Drain Current: 870 mA Rds On - Drain-Source Resistance: 280 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 400 mW Mounting Style: SMD/SMT Package / Case: SOT-363-6
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MOSFET N-CH TRENCH DL 20V (5 pieces)
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Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
Part numberPMGD280UN,115
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ManufacturerNXP Semiconductors
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FeatureManufacturer: NXP Product Category: MOSFETs - Dual RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: +/- 8 V Id - Continuous Drain Current: 870 mA Rds On - Drain-Source Resistance: 280 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 400 mW Mounting Style: SMD/SMT Package / Case: SOT-363-6
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MOSFET N-CH TRENCH DL 20V (50 pieces)
Brand: NXP Semiconductors
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Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
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ManufacturerNXP Semiconductors
Catalog
FeatureManufacturer: NXP Product Category: MOSFETs - Dual RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: +/- 8 V Id - Continuous Drain Current: 870 mA Rds On - Drain-Source Resistance: 280 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 400 mW Mounting Style: SMD/SMT Package / Case: SOT-363-6
CategoryIndustrial & Scientific
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Product typeELECTRONIC_COMPONENT
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MOSFET N-CH TRENCH DL 20V (500 pieces)
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Product groupBISS Basic
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Part numberPMGD280UN,115
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MOSFET N-CH TRENCH DL 20V (1 piece)
Brand: NXP Semiconductors
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Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
Part numberPMGD280UN,115
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ManufacturerNXP Semiconductors
Catalog
FeatureManufacturer: NXP Product Category: MOSFETs - Dual RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: +/- 8 V Id - Continuous Drain Current: 870 mA Rds On - Drain-Source Resistance: 280 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 400 mW Mounting Style: SMD/SMT Package / Case: SOT-363-6
CategoryIndustrial & Scientific
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ManufacturerNXP Semiconductors
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NXP PMGD280UN,115 MOSFET, N CH, TRENCH DL, 20V, SOT363 (5 pieces)
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Catalog
Feature<b>Price For:</b> Pack of 5<b>Order Unit:</b> Tape & Reel Full\xa01 <b>Continuous Drain Current Id:</b>: 200 <b>Drain Source Voltage Vds:</b>: 20 <b>MSL:</b>: MSL 1 - Unlimited <b>No. of Pins:</b>: 6 <b>On Resistance Rds(on):</b>: 0.28 <b>Operating Temperature Max:</b>: 150 <b>Power Dissipation Pd:</b>: 400 <b>Rds(on) Test Voltage Vgs:</b>: 4.5 <b>SVHC:</b>: No SVHC (17-Dec-2014) <b>Threshold Voltage Vgs Typ:</b>: 700 <b>Transistor Case Style:</b>: SOT-363
CategoryIndustrial & Scientific
MPNPMGD280UN,115
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerNXP
View on Amazon (paid link)
NEXPERIA PMGD280UN,115 Dual N-Channel 20 V 660 mOhm 0.89 nC 0.4 W Silicon SMT Mosfet - SOT-363 - 3000 item(s)
Brand: NEXPERIA
Dual N-Channel 20 V 660 mOhm 0.89 nC 0.4 W Silicon SMT Mosfet - SOT-363 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
  • ChannelType: Dual N-Ch
  • LowInputCapacitance: 45 pF
  • Noofchannels: 2
  • VoltageDraintoSource: 20 V
  • Drain-sourceOnResistance-Max: 660 m?RatedPowerDissipation(P): 0.4 W; QgGateCharge: 0.89 nC; GateSourceVoltageMax: 8 V; DrainCurrent-Max(ID): 0.87 A; Turn-onTime-Nom(ton): 4.5 ns; Turn-offTime-Nom(toff): 18.5 ns; RiseTIme: 10 ns; FallTime:
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
ModelPMGD280UN,115
Part numberPMGD280UN,115
Items per pack3000
LabelNEXPERIA
ManufacturerNEXPERIA
Catalog
FeatureChannelType: Dual N-Ch
CategoryIndustrial & Scientific
MPNPMGD280UN,115
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerNEXPERIA
View on Amazon (paid link)