SSM6J771G,LF Toshiba Semiconductor and Storage | Discrete Semiconductor Products | DigiKey
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Digi-Key | 4360667 | 1 | 2 | 1 | 1 @ $0.70, 10 @ $0.62, 100 @ $0.47, 500 @ $0.37, 1000 @ $0.30, 3000 @ $0.27, 6000 @ $0.26 |
![]() swatee.com | SSM6J771G,LF | 1 | 2140 | 1 | 1 @ $1.45 |
| Hotenda | H1817264 | 1 | 3000 | 1 | 1 @ $0.26 |
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MOSFET P-Ch SSM -5A -20V 12V VGSS 0.035Ohm
Catalog
| Category | Industrial & Scientific |
|---|---|
| MPN | SSM6J771G,LF |
| Manufacturer | Toshiba |
MOSFET P-Ch SSM -5A -20V 12V VGSS 0.035Ohm (10 pieces)
Brand: Toshiba
Catalog
| Feature | Manufacturer: Toshiba Product Category: MOSFET RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 20 V Vgs - Gate-Source Breakdown Voltage: 12 V Id - Continuous Drain Current: - 5 A Rds On - Drain-Source Resistance: 26 mOhms Configuration: Dual Common Drain Vgs th - Gate-Source Threshold Voltage: - 1.2 V Qg - Gate Charge: 9.8 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | SSM6J771G,LF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Toshiba |
MOSFET P-Ch SSM -5A -20V 12V VGSS 0.035Ohm (100 pieces)
Brand: Toshiba
Catalog
| Feature | Manufacturer: Toshiba Product Category: MOSFET RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 20 V Vgs - Gate-Source Breakdown Voltage: 12 V Id - Continuous Drain Current: - 5 A Rds On - Drain-Source Resistance: 26 mOhms Configuration: Dual Common Drain Vgs th - Gate-Source Threshold Voltage: - 1.2 V Qg - Gate Charge: 9.8 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | SSM6J771G,LF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Toshiba |
MOSFET P-Ch SSM -5A -20V 12V VGSS 0.035Ohm (5 pieces)
Brand: Toshiba
Catalog
| Feature | Manufacturer: Toshiba Product Category: MOSFET RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 20 V Vgs - Gate-Source Breakdown Voltage: 12 V Id - Continuous Drain Current: - 5 A Rds On - Drain-Source Resistance: 26 mOhms Configuration: Dual Common Drain Vgs th - Gate-Source Threshold Voltage: - 1.2 V Qg - Gate Charge: 9.8 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | SSM6J771G,LF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Toshiba |
MOSFET P-Ch SSM -5A -20V 12V VGSS 0.035Ohm (50 pieces)
Brand: Toshiba
Catalog
| Feature | Manufacturer: Toshiba Product Category: MOSFET RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 20 V Vgs - Gate-Source Breakdown Voltage: 12 V Id - Continuous Drain Current: - 5 A Rds On - Drain-Source Resistance: 26 mOhms Configuration: Dual Common Drain Vgs th - Gate-Source Threshold Voltage: - 1.2 V Qg - Gate Charge: 9.8 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | SSM6J771G,LF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Toshiba |
MOSFET P-Ch SSM -5A -20V 12V VGSS 0.035Ohm (500 pieces)
Brand: Toshiba
Catalog
| Feature | Manufacturer: Toshiba Product Category: MOSFET RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 20 V Vgs - Gate-Source Breakdown Voltage: 12 V Id - Continuous Drain Current: - 5 A Rds On - Drain-Source Resistance: 26 mOhms Configuration: Dual Common Drain Vgs th - Gate-Source Threshold Voltage: - 1.2 V Qg - Gate Charge: 9.8 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | SSM6J771G,LF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Toshiba |
MOSFET P-Ch SSM -5A -20V 12V VGSS 0.035Ohm (1 piece)
Brand: Toshiba
Catalog
| Feature | Manufacturer: Toshiba Product Category: MOSFET RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 20 V Vgs - Gate-Source Breakdown Voltage: 12 V Id - Continuous Drain Current: - 5 A Rds On - Drain-Source Resistance: 26 mOhms Configuration: Dual Common Drain Vgs th - Gate-Source Threshold Voltage: - 1.2 V Qg - Gate Charge: 9.8 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | SSM6J771G,LF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Toshiba |
