STMICROELECTRONICS . STF20N65M5
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 82AC0126 | 1 | 1 | ||
| STF20N65M5 | 1 | -2 | 1 | 1 @ $3.21, 10 @ $2.89, 100 @ $2.37, 250 @ $2.24, 500 @ $2.02 | |
| Digi-Key | 3874220 | 1 | 1 | ||
| RS Delivers | 783-3087 | 1 | 15 | 1 | 1 @ $3.73 |
| Amazon | B076F97BZ4 | 1 | 1 | ||
 Digi-Key | 497-13532-ND | 1 | 1060 | 1 | 1 @ $2.59, 10 @ $2.33, 25 @ $2.20, 100 @ $1.71, 500 @ $1.45, 1000 @ $1.23, 2500 @ $1.21, 5000 @ $1.13, 9000 @ $1.08 |
| Future Electronics | 9050561 | 1000 | 1000 | 1000 @ $2.42 | |
| Win Source | STF20N65M5 | 1 | 23 | 1 | |
| Hotenda | H1822453 | 1 | 39 | 1 | 1 @ $4.64, 10 @ $4.17, 100 @ $3.41, 500 @ $2.90 |
Related on Amazon
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MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh(TM) V (10 pieces)
Brand: STMicroelectronics
Catalog
| Feature | Manufacturer: STMicroelectronics RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 650 V Continuous Drain Current: 18 A, 72 A Drain-Source On Resistance: 190 mOhms Mounting Style: Through Hole Package / Case: TO-220 FP Packaging: Tube Fall Time: 7.5 ns Gate Charge Qg: 36 nC Power Dissipation: 130 W Rise Time: 7.5 ns |
|---|---|
| Category | Industrial & Scientific |
| MPN | STF20N65M5 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | STMicroelectronics |
MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh(TM) V (100 pieces)
Brand: STMicroelectronics
Catalog
| Feature | Manufacturer: STMicroelectronics RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 650 V Continuous Drain Current: 18 A, 72 A Drain-Source On Resistance: 190 mOhms Mounting Style: Through Hole Package / Case: TO-220 FP Packaging: Tube Fall Time: 7.5 ns Gate Charge Qg: 36 nC Power Dissipation: 130 W Rise Time: 7.5 ns |
|---|---|
| Category | Industrial & Scientific |
| MPN | STF20N65M5 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | STMicroelectronics |
MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh(TM) V (5 pieces)
Brand: STMicroelectronics
Catalog
| Feature | Manufacturer: STMicroelectronics RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 650 V Continuous Drain Current: 18 A, 72 A Drain-Source On Resistance: 190 mOhms Mounting Style: Through Hole Package / Case: TO-220 FP Packaging: Tube Fall Time: 7.5 ns Gate Charge Qg: 36 nC Power Dissipation: 130 W Rise Time: 7.5 ns |
|---|---|
| Category | Industrial & Scientific |
| MPN | STF20N65M5 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | STMicroelectronics |
MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh(TM) V (50 pieces)
Brand: STMicroelectronics
Catalog
| Feature | Manufacturer: STMicroelectronics RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 650 V Continuous Drain Current: 18 A, 72 A Drain-Source On Resistance: 190 mOhms Mounting Style: Through Hole Package / Case: TO-220 FP Packaging: Tube Fall Time: 7.5 ns Gate Charge Qg: 36 nC Power Dissipation: 130 W Rise Time: 7.5 ns |
|---|---|
| Category | Industrial & Scientific |
| MPN | STF20N65M5 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | STMicroelectronics |
MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh(TM) V (500 pieces)
Brand: STMicroelectronics
Catalog
| Feature | Manufacturer: STMicroelectronics RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 650 V Continuous Drain Current: 18 A, 72 A Drain-Source On Resistance: 190 mOhms Mounting Style: Through Hole Package / Case: TO-220 FP Packaging: Tube Fall Time: 7.5 ns Gate Charge Qg: 36 nC Power Dissipation: 130 W Rise Time: 7.5 ns |
|---|---|
| Category | Industrial & Scientific |
| MPN | STF20N65M5 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | STMicroelectronics |
MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh(TM) V (1 piece)
Brand: STMicroelectronics
Catalog
| Feature | Manufacturer: STMicroelectronics RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 650 V Continuous Drain Current: 18 A, 72 A Drain-Source On Resistance: 190 mOhms Mounting Style: Through Hole Package / Case: TO-220 FP Packaging: Tube Fall Time: 7.5 ns Gate Charge Qg: 36 nC Power Dissipation: 130 W Rise Time: 7.5 ns |
|---|---|
| Category | Industrial & Scientific |
| MPN | STF20N65M5 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | STMicroelectronics |
ST MICROELECTRONICS STF20N65M5 N-Channel 650 V 18 A 0.19 Ohm MDmesh V Power Mosfet - TO-220FP - 5 item(s)
Brand: STMicroelectronics
N-Channel 650 V 18 A 0.19 Ohm MDmesh V Power Mosfet - TO-220FP ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: N-Channel
- VoltageDraintoSource: 650 V
- Drain-sourceOnResistance-Max: 190 mΩ
- QgGateCharge: 36 nC
- RatedPowerDissipation(P): 30 W
Listing
| Product group | BISS |
|---|---|
| Product type | HARDWARE |
| Model | STF20N65M5 |
| Part number | STF20N65M5 |
| Items per pack | 5 |
| Label | ST MICROELECTRONICS |
| Manufacturer | ST MICROELECTRONICS |