Nexperia Mosfet, N Channel, 40V, 100A, D2Pak - PSMN4R5-40BS,118
Gallery
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 06W0927 | 1 | 2744 | 1 | 1 @ $1.41, 10 @ $1.24, 100 @ $0.91, 500 @ $0.86, 1600 @ $0.70, 3200 @ $0.67 |
| TME | PSMN4R5-40BS.118 | 1 | 1 | 1 @ $1.98, 5 @ $1.79, 25 @ $1.57, 100 @ $1.41, 800 @ $1.27 | |
| RS Delivers | 798-2974 | 1 | 35 | 1 | 1 @ $1.70 |
| Digi-Key | 3131587 | 1 | 114 | 1 | 1 @ $1.70, 10 @ $1.52, 100 @ $1.23, 800 @ $1.01, 1600 @ $0.83 |
| Digi-Key | 2156-PSMN4R5-40BS,118-ND | 1 | 1 | ||
| iodParts | PSMN4R5-40BS,118 | 1600 | 3200 | 1600 | 1600 @ $0.74, 2400 @ $0.72 |
| Win Source | PSMN4R5-40BS,118 | 1 | 20000 | 1 | |
| Hotenda | H1816342 | 800 | 4000 | 800 | 800 @ $0.77 |
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MOSFET Std N-chanMOSFET (10 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 100 A Rds On - Drain-Source Resistance: 4.5 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 148 W Mounting Style: Through Hole Package / Case: D2PAK-2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN4R5-40BS,118 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET Std N-chanMOSFET (100 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 100 A Rds On - Drain-Source Resistance: 4.5 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 148 W Mounting Style: Through Hole Package / Case: D2PAK-2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN4R5-40BS,118 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET Std N-chanMOSFET (5 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 100 A Rds On - Drain-Source Resistance: 4.5 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 148 W Mounting Style: Through Hole Package / Case: D2PAK-2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN4R5-40BS,118 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET Std N-chanMOSFET (50 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 100 A Rds On - Drain-Source Resistance: 4.5 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 148 W Mounting Style: Through Hole Package / Case: D2PAK-2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN4R5-40BS,118 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET Std N-chanMOSFET (500 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 100 A Rds On - Drain-Source Resistance: 4.5 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 148 W Mounting Style: Through Hole Package / Case: D2PAK-2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN4R5-40BS,118 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | NXP Semiconductors |
MOSFET Std N-chanMOSFET (1 piece)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 100 A Rds On - Drain-Source Resistance: 4.5 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 148 W Mounting Style: Through Hole Package / Case: D2PAK-2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN4R5-40BS,118 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |