Vishay Mosfet, N Channel, 20V, 6A, Powerpak Sc75-6, Full Reel - SIB406EDK-T1-GE3
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Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 15R4846 | 3000 | 3000 | 1 @ $0.22, 5000 @ $0.21, 10000 @ $0.20, 20000 @ $0.18, 30000 @ $0.17, 50000 @ $0.17 | |
| TME | SIB406EDK-T1-GE3 | 3000 | 3000 | 3000 @ $0.33 | |
| Allied Electronics | 70616556 | 300 | 20 | ||
 Radwell | SIB406EDK-T1-GE3 | 3000 | 3000 | ||
| Digi-Key | 2442420 | 1 | 1 | 1 @ $0.69, 10 @ $0.59, 100 @ $0.44, 500 @ $0.35, 1000 @ $0.27 | |
| RS Delivers | 814-1247 | 1 | 1 | ||
| iodParts | SIB406EDK-T1-GE3 | 1 | 1 | ||
| Hotenda | H1811556 | 1 | 1 |
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MOSFET 20V 6.0A 10W 46mohm @ 4.5V (1 piece)
Brand: Vishay Semiconductors
Catalog
| Feature | <b>Price For:</b> Pack of 1 <b>Manufacturer</b>: Vishay <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Brand</b>: Vishay Semiconductors <b>Id - Continuous Drain Current</b>: 5.1 A <b>Vds - Drain-Source Breakdown Voltage</b>: 20 V <b>Rds On - Drain-Source Resistance</b>: 46 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 12 V <b>Maximum Operating Temperature</b>: + 150 C <b>Pd - Power Dissipation</b>: 1.95 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | SIB406EDK-T1-GE3 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Vishay Semiconductors |
MOSFET 20V 6.0A 10W 46mohm @ 4.5V (10 pieces)
Brand: Vishay Semiconductors
Catalog
| Feature | <b>Price For:</b> Pack of 10 <b>Manufacturer</b>: Vishay <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Brand</b>: Vishay Semiconductors <b>Id - Continuous Drain Current</b>: 5.1 A <b>Vds - Drain-Source Breakdown Voltage</b>: 20 V <b>Rds On - Drain-Source Resistance</b>: 46 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 12 V <b>Maximum Operating Temperature</b>: + 150 C <b>Pd - Power Dissipation</b>: 1.95 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | SIB406EDK-T1-GE3 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Vishay Semiconductors |
MOSFET 20V 6.0A 10W 46mohm @ 4.5V (100 pieces)
Brand: Vishay Semiconductors
Catalog
| Feature | <b>Price For:</b> Pack of 100 <b>Manufacturer</b>: Vishay <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Brand</b>: Vishay Semiconductors <b>Id - Continuous Drain Current</b>: 5.1 A <b>Vds - Drain-Source Breakdown Voltage</b>: 20 V <b>Rds On - Drain-Source Resistance</b>: 46 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 12 V <b>Maximum Operating Temperature</b>: + 150 C <b>Pd - Power Dissipation</b>: 1.95 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | SIB406EDK-T1-GE3 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Vishay Semiconductors |
MOSFET 20V 6.0A 10W 46mohm @ 4.5V (5 pieces)
Brand: Vishay Semiconductors
Catalog
| Feature | <b>Price For:</b> Pack of 5 <b>Manufacturer</b>: Vishay <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Brand</b>: Vishay Semiconductors <b>Id - Continuous Drain Current</b>: 5.1 A <b>Vds - Drain-Source Breakdown Voltage</b>: 20 V <b>Rds On - Drain-Source Resistance</b>: 46 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 12 V <b>Maximum Operating Temperature</b>: + 150 C <b>Pd - Power Dissipation</b>: 1.95 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | SIB406EDK-T1-GE3 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Vishay Semiconductors |
MOSFET 20V 6.0A 10W 46mohm @ 4.5V (50 pieces)
Brand: Vishay Semiconductors
Catalog
| Feature | <b>Price For:</b> Pack of 50 <b>Manufacturer</b>: Vishay <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Brand</b>: Vishay Semiconductors <b>Id - Continuous Drain Current</b>: 5.1 A <b>Vds - Drain-Source Breakdown Voltage</b>: 20 V <b>Rds On - Drain-Source Resistance</b>: 46 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 12 V <b>Maximum Operating Temperature</b>: + 150 C <b>Pd - Power Dissipation</b>: 1.95 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | SIB406EDK-T1-GE3 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Vishay Semiconductors |
SIB406EDK-T1-GE3, Trans MOSFET N-CH 20V 6A 6-Pin PowerPAK SC-75 T/R (250 Items)
Brand: Vishay
EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Quad Drain Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 20 Maximum Gate Source Voltage (V): ±12 Maximum Continuous Drain Current (A): 6 Maximum Drain Source Resistance (mOhm): 46@4.5V Typical Gate Charge @ Vgs (nC): 7.5@10V|3.5@4.5V Typical Gate Charge @ 10V (nC): 7.5 Typical Input Capacitance @ Vds (pF): 350@10V Maximum Power Dissipation (mW): 1950 Typical Fall Time (ns): 10|12 Typical Rise Time (ns): 12 Typical Turn-Off Delay Time (ns): 15|18 Typical Turn-On Delay Time (ns): 5|10 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Supplier Package: PowerPAK SC-75 Pin Count: 6 Standard Package Name: PowerPAK SC-75 Mounting: Surface Mount Package Height: 0.75(Max) Package Length: 1.6 Package Width: 1.6 PCB changed: 6 Lead Shape: No Lead