Vishay N Channel Mosfet - SI7858ADP-T1-E3
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Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 64J7430 | 3000 | 3000 | 2000 @ $2.15, 4000 @ $2.00, 8000 @ $1.87, 12000 @ $1.80, 20000 @ $1.77 | |
| SI7858ADPT1E3 | 1 | 1 | |||
 Radwell | SI7858ADP-T1-E3 | 3000 | 3000 | ||
| Allied Electronics | 70026284 | 3000 | 3000 | ||
| 1Source | SI7858ADP-T1-E3 | 1 | 1 | ||
| Digi-Key | 1656656 | 1000 | 1000 | 1 @ $3.31, 10 @ $2.97, 100 @ $2.39, 500 @ $1.96, 1000 @ $1.68 | |
| iodParts | SI7858ADP-T1-E3 | 1 | 1572 | 1 | |
| Future Electronics | 2775351 | 3000 | 3000 | 3000 @ $1.27 | |
| Win Source | SI7858ADP-T1-E3 | 1 | 28020 | 1 | |
| Hotenda | H1807270 | 1 | 6000 | 1 | 1 @ $0.89 |
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SILICONIX (VISHAY) SI7858ADP-T1-E3 Single N-Channel 12 V 0.0026 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8 - 3000 item(s)
Brand: SILICONIX (VISHAY)
Single N-Channel 12 V 0.0026 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: N-Channel; VoltageDraintoSource: 12 V; Drain-sourceOnResistance-Max: 0.0026 Ω;
- QgGateCharge: 80 nC; RatedPowerDissipation(P): 1.9 W;
Listing
| Product group | BISS |
|---|---|
| Product type | BISS |
| Model | SI7858ADP-T1-E3 |
| Part number | SI7858ADP-T1-E3 |
| Items per pack | 3000 |
| Label | SILICONIX (VISHAY) |
| Manufacturer | SILICONIX (VISHAY) |
Catalog
| Feature | ChannelType: N-Channel; VoltageDraintoSource: 12 V; Drain-sourceOnResistance-Max: 0.0026 \u03a9; |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7858ADP-T1-E3 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | SILICONIX (VISHAY) |
SI7858ADP-T1-E3, SI7858ADP-T1-E3 Vishay MOSFETs Transistor N-CH 12V 20A 8-Pin PowerPAK SO T/R - Arrow.com (25 Items)
Brand: Vishay
EU RoHS: Compliant ECCN (US): EAR99 Part Status: NRND HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Quad Drain Triple Source Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 12 Maximum Gate Source Voltage (V): ±8 Maximum Gate Threshold Voltage (V): 1.5 Maximum Continuous Drain Current (A): 20 Maximum Drain Source Resistance (mOhm): 2.6@4.5V Typical Gate Charge @ Vgs (nC): 54@4.5V Typical Gate to Drain Charge (nC): 16 Typical Gate to Source Charge (nC): 10 Typical Input Capacitance @ Vds (pF): 5700@6V Typical Output Capacitance (pF): 2680 Maximum Power Dissipation (mW): 5400 Typical Fall Time (ns): 70 Typical Rise Time (ns): 40 Typical Turn-Off Delay Time (ns): 140 Typical Turn-On Delay Time (ns): 40 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Maximum Continuous Drain Current on PCB @ TC=25°C (A): 20 (Ta) Typical Gate Threshold Voltage (V): 2.5|4.5 Supplier Package: PowerPAK SO Pin Count: 8 Mounting: Surface Mount Package Height: 1.07(Max) Package Length: 4.9 Package Width: 5.89 PCB changed: 8 Lead Shape: No Lead