Vishay Mosfet, N Channel, 600V, 21A, To-220F - SIHA22N60E-E3

EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Material: Si Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 600 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 4 Maximum Continuous Drain Current (A): 21 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 1 Maximum Drain Source Resistance (mOhm): 180@10V Typical Gate Charge @ Vgs (nC): 57@10V Typical Gate Charge @ 10V (nC): 57 Typical Input Capacitance @ Vds (pF): 1920@100V Maximum Power Dissipation (mW): 35000 Typical Fall Time (ns): 35 Typical Rise Time (ns): 77 Typical Turn-Off Delay Time (ns): 26 Typical Turn-On Delay Time (ns): 18 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Supplier Package: TO-220 Full-Pak Pin Count: 3 Standard Package Name: TO-220 Mounting: Through Hole Package Height: 15.3(Max) Package Length: 10.3(Max) Package Width: 4.7(Max) PCB changed: 3 Tab: Tab Lead Shape: Through Hole