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IXTH12N100L IXYS Transistors - Jotrin Electronics

IXYS Corporation . IXTH12N100L

Gallery

Attributes

Brand name, Manufacturer nameIXYS Corporation
ManufacturerIXYS Corporation IXYS
Attribute00, Attribute08TO-247
Attribute01MOSFET
Attribute02Rohs
Attribute03, qtyInStock20000
Attribute041.3 Ohms
Attribute05Single
Attribute06+ 150 C
Attribute07Through Hole
Attribute09Tube
Attribute1065 ns
Attribute11- 55 C
Attribute12400 W
Attribute1355 ns
Attribute1430
Attribute15110 ns
AttributeKey00Package/Case
AttributeKey01Product Categories
AttributeKey02RoHs Status
AttributeKey03In-stock
AttributeKey04Resistance Drain Source RDS (on)
AttributeKey05Configuration
AttributeKey06Maximum Operating Temperature
AttributeKey07Mounting Style
AttributeKey08Package / Case
AttributeKey09Packaging
AttributeKey10Fall Time
AttributeKey11Minimum Operating Temperature
AttributeKey12Power Dissipation
AttributeKey13Rise Time
AttributeKey14Factory Pack Quantity
AttributeKey15Typical Turn Off Delay Time
Extra Product NameIXTH12N100L IXYS Transistors - Jotrin Electronics
keywordsIXTH12N100L,IXYS,TO-247,MOSFET,IXTH12N100L Datasheet PDF
moq, multiple, Case, PackageQuantity1
MPN, Part Number, PartNumberIXTH12N100L
SKUJT25-IXTH12N100L
snippetBuy IXTH12N100L IXYS , Learn more about IXTH12N100L N-Channel MOSFET, 12 A, 1000 V Linear, 3-Pin TO-247 IXYS, View the manufacturer, and stock, and datasheet pdf for the IXTH12N100L at Jotrin Electronics.
Product Group, ProductGroupBISS
AsinB00HKZ2J84
Brand, Label, Man, Publisher, StudioIXYS
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 747-IXTH12N100L
FeatureManufacturer: IXYS Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 1 kV Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 1.3 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 400 W Mounting Style: Through Hole Package / Case: TO-247-3
ProductTypeNameELECTRONIC_COMPONENT
TitleMOSFET 12 Amps 1000V 1.3 Ohms Rds

Distributor offers

SellerSKUMOQIn stockMultiplePrices
jotrin.comJT25-IXTH12N100L1200001
GalcoIXTH12N100L11
TMEIXTH12N100L111 @ $30.40, 3 @ $27.18, 10 @ $24.10, 30 @ $21.69
Digi-Key165246011
RS Delivers686-784011
Digi-KeyIXTH12N100L-ND11301 @ $15.69, 10 @ $14.42, 25 @ $13.82, 100 @ $11.95, 250 @ $11.58, 500 @ $10.83, 1000 @ $9.94, 2500 @ $9.34
RadwellIXTH12N100L11
HotendaH182915211

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MOSFET 12 Amps 1000V 1.3 Ohms Rds
Brand: IXYS
Catalog
FeatureManufacturer: IXYS Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 1 kV Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 1.3 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 400 W Mounting Style: Through Hole Package / Case: TO-247-3
CategoryIndustrial & Scientific
MPNIXTH12N100L
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerIXYS
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