Vishay N Channel Mosfet, 40V, 33A, Soic - SI4456DY-T1-E3

N CHANNEL MOSFET, 40V, 33A, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:33A; On Resistance Rds(on):0.0045ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:20V RoHS Compliant: Yes

Single N-Channel 40 V 0.0038 Ohm Surface Mount Power Mosfet - SOIC-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****

EU RoHS: Compliant ECCN (US): EAR99 Part Status: NRND HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Quad Drain Triple Source Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 40 Maximum Gate Source Voltage (V): ±20 Maximum Continuous Drain Current (A): 33 Maximum Drain Source Resistance (mOhm): 3.8@10V Typical Gate Charge @ Vgs (nC): 37.5@4.5V|81@10V Typical Gate Charge @ 10V (nC): 81 Typical Input Capacitance @ Vds (pF): 5670@20V Maximum Power Dissipation (mW): 3500 Typical Fall Time (ns): 8|15 Typical Rise Time (ns): 58|208 Typical Turn-Off Delay Time (ns): 56|55 Typical Turn-On Delay Time (ns): 21|145 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Supplier Package: SOIC N Pin Count: 8 Standard Package Name: SOP Mounting: Surface Mount Package Height: 1.55(Max) Package Length: 5(Max) Package Width: 4(Max) PCB changed: 8 Lead Shape: Gull-wing