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IXYS IXTP3N100P | Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 820ns

IXYS . IXTP3N100P

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Attributes

Brand name, Manufacturer name, Manufacturer, Attribute00, ManIXYS
Attribute01N-MOSFET
Attribute02unipolar
Attribute031kV
Attribute043A
Attribute05125W
Attribute06TO220AB
Attribute07THT
Attribute0836nC
Attribute09tube
Attribute10enhanced
Attribute11standard power mosfet
Attribute12820ns
AttributeKey00Manufacturer
AttributeKey01Type of transistor
AttributeKey02Polarisation
AttributeKey03Drain-source voltage
AttributeKey04Drain current
AttributeKey05Power dissipation
AttributeKey06Case
AttributeKey07Mounting
AttributeKey08Gate charge
AttributeKey09Kind of package
AttributeKey10Kind of channel
AttributeKey11Features of semiconductor devices
AttributeKey12Reverse recovery time
CategoryL1Semiconductors
CategoryL2Transistors
CategoryL3Unipolar transistors
CategoryL4N channel transistors
Extra Product NameIXYS IXTP3N100P | Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 820ns
atoms, moq, multiple, tierMinQty1, Case, Item_package_quantity, PackageQuantity1
jsonUrlData3a53f47d859545eb653d5cae4cc3cc00.
jsonUrlData2ad166df30d36563939de
keywordsIXYS, IXTP3N100P
MPN, SKU, Part Number, PartNumber, Part_numberIXTP3N100P
qtyInStock0
snippetIXYS IXTP3N100P | Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 820n
tierMinQty23
tierMinQty310
tierMinQty450
tierPrice14.48
tierPrice24.03
tierPrice33.57
tierPrice43.2
AdultProduct, Autographed, Memorabilia, TradeInEligibleFalse
AsinB00HKZ4GCQ
BrandX-ON
Bullet_pointConfiguration : Single ; Package / Case : To-220-3 ; Packaging : Tube ; Series : Ixtp3n100 ; Forward Transconductance - Min : 1.5 S Manufacturer : IXYS ; Maximum Operating Temperature : + 150 C ; Minimum Operating Temperature : - 55 C ; Pd - Power Dissipation : 125 W ; Qg - Gate Charge : 39 nC Mounting Style : Through Hole ; Transistor Polarity : N-Channel ; Channel Mode : Enhancement ; Fall Time : 29 Ns ; Id - Continuous Drain Current : 3 A Rds On - Drain-Source Resistance : 4.8 Ohms ; Rise Time : 27 Ns ; Standard Pack Qty : 50 ; Tradename : Polar ; Typical Turn-Off Delay Time : 75 Ns Typical Turn-On Delay Time : 22 Ns ; Vds - Drain-Source Breakdown Voltage : 1000 V ; MOSFET
CatIndustrial & Scientific
CatId16310091
ClassificationId495266
DisplayNameElectrical
FetchTime1725397546
Height, Width500 75
ItemClassificationBASE_PRODUCT
ItemName, Item_nameMOSFET 3 Amps 1000V 4.8 Rds
Item_type_keywordelectrical-equipment
Item_weight20.0
Linkhttps://m.media-amazon.com/images/I/41CUkLapQUL._SL75_.jpg https://m.media-amazon.com/images/I/41CUkLapQUL.jpg
Marketplace_idATVPDKIKX0DER
ProductTypeHARDWARE
Product_descriptionD-Sub Tools & Hardware Gender : Male ; Product : Accessories ; Type : Dust Cover ; Cartridge Fuses Body Style : Cylindrical ; Current Rating : 630 mA ; Diameter : 5.2 Mm ; Length : 20 Mm ; Packaging : Bulk ;
Product_site_launch_date2016-01-01T00:00:00.000-08:00
Unitgrams pounds
VariantMAIN
WebsiteDisplayGrouphome_improvement_display_on_website
WebsiteDisplayGroupNameHome Improvement
Weight0.0440924524

Distributor offers

SellerSKUMOQIn stockMultiplePrices
TMEIXTP3N100P111 @ $4.48, 3 @ $4.03, 10 @ $3.57, 50 @ $3.20
Digi-Key1652539129611 @ $4.68, 10 @ $4.21, 100 @ $3.45, 500 @ $2.93, 1000 @ $2.47, 2000 @ $2.35
swatee.comIXTP3N100P13411 @ $5.58
HotendaH182829811
Future ElectronicsC010613834505050 @ $2.03, 200 @ $1.75, 400 @ $1.68

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MOSFET 3 Amps 1000V 4.8 Rds
Brand: X-ON
D-Sub Tools & Hardware Gender : Male ; Product : Accessories ; Type : Dust Cover ; Cartridge Fuses Body Style : Cylindrical ; Current Rating : 630 mA ; Diameter : 5.2 Mm ; Length : 20 Mm ; Packaging : Bulk ;
Details
  • Configuration : Single ; Package / Case : To-220-3 ; Packaging : Tube ; Series : Ixtp3n100 ; Forward Transconductance - Min : 1.5 S
  • Mounting Style : Through Hole ; Transistor Polarity : N-Channel ; Channel Mode : Enhancement ; Fall Time : 29 Ns ; Id - Continuous Drain Current : 3 A
  • Manufacturer : IXYS ; Maximum Operating Temperature : + 150 C ; Minimum Operating Temperature : - 55 C ; Pd - Power Dissipation : 125 W ; Qg - Gate Charge : 39 nC
  • Rds On - Drain-Source Resistance : 4.8 Ohms ; Rise Time : 27 Ns ; Standard Pack Qty : 50 ; Tradename : Polar ; Typical Turn-Off Delay Time : 75 Ns
  • Typical Turn-On Delay Time : 22 Ns ; Vds - Drain-Source Breakdown Voltage : 1000 V ; MOSFET
Catalog
CategoryIndustrial & Scientific
MPNIXTP3N100P
ManufacturerIXYS
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