Vishay N-Channel 30-V (D-S) Mosfet Rohs Compliant: Yes - SI3424CDV-T1-GE3

EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Quad Drain Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 30 Maximum Gate Source Voltage (V): ±20 Maximum Continuous Drain Current (A): 8 Maximum Drain Source Resistance (mOhm): 26@10V Typical Gate Charge @ Vgs (nC): 8.3@10V|4.3@4.5V Typical Gate Charge @ 10V (nC): 8.3 Typical Input Capacitance @ Vds (pF): 405@15V Maximum Power Dissipation (mW): 2000 Typical Fall Time (ns): 8|9 Typical Rise Time (ns): 12|22 Typical Turn-Off Delay Time (ns): 16|15 Typical Turn-On Delay Time (ns): 3|10 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Supplier Package: TSOP Pin Count: 6 Standard Package Name: SOP Mounting: Surface Mount Package Height: 1(Max) Package Length: 3.05 Package Width: 1.65 PCB changed: 6 Lead Shape: Gull-wing