Vishay Mosfet, Dual N Channel, 100V, 3.8A, Powerpak - SI7942DP-T1-GE3
Gallery
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
![]() Newark | 18X0027 | 3000 | 3000 | 1000 @ $1.65 | |
![]() Radwell | SI7942DP-T1-GE3 | 3000 | 3000 | ||
| Digi-Key | 1995583 | 1 | 1 | 1 @ $3.51, 10 @ $3.15, 100 @ $2.58, 500 @ $2.20, 1000 @ $1.99 | |
| componentsense.com | SI7942DP-T1-GE3 | 1 | 1 | ||
| iodParts | SI7942DP-T1-GE3 | 1 | 9000 | 1 | |
| Win Source | SI7942DP-T1-GE3 | 1 | 8755 | 1 | |
| Future Electronics | 2065771 | 3000 | 3000 | 3000 @ $1.33 |
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MOSFET Dual N-Ch 100V 49mohm @ 10V (10 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Dual MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 3.8 A Rds On - Drain-Source Resistance: 49 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.4 W Mounting Style: SMD/SMT Package / Case: PowerPAK SO-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7942DP-T1-GE3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET Dual N-Ch 100V 49mohm @ 10V (100 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Dual MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 3.8 A Rds On - Drain-Source Resistance: 49 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.4 W Mounting Style: SMD/SMT Package / Case: PowerPAK SO-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7942DP-T1-GE3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET Dual N-Ch 100V 49mohm @ 10V (5 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Dual MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 3.8 A Rds On - Drain-Source Resistance: 49 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.4 W Mounting Style: SMD/SMT Package / Case: PowerPAK SO-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7942DP-T1-GE3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET Dual N-Ch 100V 49mohm @ 10V (50 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Dual MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 3.8 A Rds On - Drain-Source Resistance: 49 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.4 W Mounting Style: SMD/SMT Package / Case: PowerPAK SO-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7942DP-T1-GE3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET Dual N-Ch 100V 49mohm @ 10V (1 piece)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Dual MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 3.8 A Rds On - Drain-Source Resistance: 49 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.4 W Mounting Style: SMD/SMT Package / Case: PowerPAK SO-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7942DP-T1-GE3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
SILICONIX (VISHAY) SI7942DP-T1-GE3 Si7942DP Series 100 V 3.8 A 49 mOhm Dual N-Channel Mosfet - PowerPAK SO-8 - 3000 item(s)
Brand: SILICONIX (VISHAY)
Si7942DP Series 100 V 3.8 A 49 mOhm Dual N-Channel Mosfet - PowerPAK SO-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: Dual N-Ch
- Noofchannels: 2
- VoltageDraintoSource: 100 V
- Drain-sourceOnResistance-Max: 49 mΩ
- RatedPowerDissipation(P): 1.4 WQgGateCharge: 16 nC; GateSourceVoltageMax: 20 V; DrainCurrent-Max(ID): 3.8 A; Turn-onTime-Nom(ton): 15 ns; Turn-offTime-Nom(toff): 35 ns; RiseTIme: 15 ns; FallTime: 20 ns; OperatingTempRange: -55 to +150 °C;
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | SI7942DP-T1-GE3 |
| Part number | SI7942DP-T1-GE3 |
| Items per pack | 3000 |
| Label | SILICONIX (VISHAY) |
| Manufacturer | SILICONIX (VISHAY) |
Catalog
| Feature | ChannelType: Dual N-Ch |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7942DP-T1-GE3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | SILICONIX (VISHAY) |
