As an Amazon Associate, we earn from qualifying purchases.

IXFP6N120P IXYS Transistors - Jotrin Electronics

IXYS Corporation . IXFP6N120P

Gallery

Attributes

Brand name, Manufacturer nameIXYS Corporation
ManufacturerIXYS Corporation IXYS
Attribute00TO-220
Attribute01MOSFET
Attribute02Green
Attribute03, qtyInStock18850
Attribute04Active
Attribute05Tube
Attribute06Through Hole
Attribute07TO-220-3
Attribute08Compliant
Attribute09Lead Free
Attribute10NLR
AttributeKey00Package/Case
AttributeKey01Product Categories
AttributeKey02RoHs Status
AttributeKey03In-stock
AttributeKey04Product Lifecycle Status
AttributeKey05Packaging
AttributeKey06Mounting Style
AttributeKey07Case/Package
AttributeKey08RoHS
AttributeKey09Lead Free Status
AttributeKey10HK STC License
Extra Product NameIXFP6N120P IXYS Transistors - Jotrin Electronics
keywordsIXFP6N120P,IXYS,TO-220,MOSFET,IXFP6N120P Datasheet PDF
moq, multiple1
MPN, Part Number, PartNumberIXFP6N120P
SKUJT25-IXFP6N120P
snippetBuy IXFP6N120P IXYS , Learn more about IXFP6N120P MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A, View the manufacturer, and stock, and datasheet pdf for the IXFP6N120P at Jotrin Electronics.
Product Group, ProductGroupBISS
AsinB00LWONKFU B00LWONOL0 B00M2DRGZA
Brand, Label, Man, Publisher, StudioIXYS
Case, PackageQuantity1 10 5
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 747-IXFP6N120P X1 MS 747-IXFP6N120P X10 MS 747-IXFP6N120P X5
FeatureManufacturer: IXYS Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 1.2 kV Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 6 A Rds On - Drain-Source Resistance: 2.75 Ohms Vgs th - Gate-Source Threshold Voltage: 5 V Qg - Gate Charge: 92 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 250 W
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 5 Piece
TitleMOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A (1 piece) MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A (10 pieces) MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A (5 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
jotrin.comJT25-IXFP6N120P1188501
TMEIXFP6N120P111 @ $8.76, 3 @ $7.88, 10 @ $6.97, 50 @ $6.26
Digi-Key235443714311 @ $10.23, 10 @ $9.24, 100 @ $7.65, 500 @ $6.66, 1000 @ $5.80
HotendaH1819839143911 @ $6.88, 10 @ $6.19, 25 @ $5.64, 100 @ $5.09, 250 @ $4.67, 500 @ $4.26
Future Electronics9027630150150150 @ $4.98, 100 @ $4.28

Related on Amazon

As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.

MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A (10 pieces)
Brand: IXYS
Catalog
FeatureManufacturer: IXYS Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 1.2 kV Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 6 A Rds On - Drain-Source Resistance: 2.75 Ohms Vgs th - Gate-Source Threshold Voltage: 5 V Qg - Gate Charge: 92 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 250 W
CategoryIndustrial & Scientific
MPNIXFP6N120P
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerIXYS
View on Amazon (paid link)
MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A (5 pieces)
Brand: IXYS
Catalog
FeatureManufacturer: IXYS Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 1.2 kV Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 6 A Rds On - Drain-Source Resistance: 2.75 Ohms Vgs th - Gate-Source Threshold Voltage: 5 V Qg - Gate Charge: 92 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 250 W
CategoryIndustrial & Scientific
MPNIXFP6N120P
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerIXYS
View on Amazon (paid link)
MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A (1 piece)
Brand: IXYS
Catalog
FeatureManufacturer: IXYS Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 1.2 kV Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 6 A Rds On - Drain-Source Resistance: 2.75 Ohms Vgs th - Gate-Source Threshold Voltage: 5 V Qg - Gate Charge: 92 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 250 W
CategoryIndustrial & Scientific
MPNIXFP6N120P
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerIXYS
View on Amazon (paid link)