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IXYS IXTT16N50D2 | Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns

IXYS . IXTT16N50D2

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Attributes

Brand name, Manufacturer name, Manufacturer, Attribute00, Brand, Label, Man, Publisher, StudioIXYS
Attribute01N-MOSFET
Attribute02unipolar
Attribute03500V
Attribute0416A
Attribute05695W
Attribute06TO268
Attribute07300m?
Attribute08SMD
Attribute09tube
Attribute10depleted
Attribute11130ns
AttributeKey00Manufacturer
AttributeKey01Type of transistor
AttributeKey02Polarisation
AttributeKey03Drain-source voltage
AttributeKey04Drain current
AttributeKey05Power dissipation
AttributeKey06Case
AttributeKey07On-state resistance
AttributeKey08Mounting
AttributeKey09Kind of package
AttributeKey10Kind of channel
AttributeKey11Reverse recovery time
CategoryL1Semiconductors
CategoryL2Transistors
CategoryL3Unipolar transistors
CategoryL4N channel transistors
Extra Product NameIXYS IXTT16N50D2 | Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns
atoms, moq, multiple, tierMinQty11
jsonUrlDatad73dd57f5acf6e52d4cadbfc79c758dd.5
jsonUrlData23988cb3929f6a34d1ec2
keywordsIXYS, IXTT16N50D2, Semiconductors, Transistors, Unipolar transistors, N channel transistors, SMD N channel transistors
MPN, SKU, Part Number, PartNumberIXTT16N50D2
qtyInStock0
snippetIXYS IXTT16N50D2 | Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130n
tierMinQty23
tierMinQty310
tierMinQty430
tierPrice119
tierPrice217.11
tierPrice315.22
tierPrice413.54
AsinB00HKZAXJG B00LWORBO6 B00LWORED4 B00M2DUWR4
Case, PackageQuantity1 10 5
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 747-IXTT16N50D2 X1 MS 747-IXTT16N50D2 X10 MS 747-IXTT16N50D2 X5
FeatureManufacturer: IXYS Product Category: MOSFET Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 16 A Rds On - Drain-Source Resistance: 300 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: - 2 V Qg - Gate Charge: 199 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 695 W
ProductGroupBISS
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 5 Piece
TitleMOSFET D2 Depletion Mode Power MOSFETs MOSFET D2 Depletion Mode Power MOSFETs (1 piece) MOSFET D2 Depletion Mode Power MOSFETs (10 pieces) MOSFET D2 Depletion Mode Power MOSFETs (5 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
TMEIXTT16N50D2111 @ $19.00, 3 @ $17.11, 10 @ $15.22, 30 @ $13.54
Digi-Key2505040132711 @ $19.65, 10 @ $18.06, 25 @ $17.31, 100 @ $15.26, 250 @ $14.51, 500 @ $13.57
HotendaH182887411

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MOSFET D2 Depletion Mode Power MOSFETs
Catalog
CategoryIndustrial & Scientific
MPNIXTT16N50D2
ManufacturerIXYS
View on Amazon (paid link)
MOSFET D2 Depletion Mode Power MOSFETs (10 pieces)
Brand: IXYS
Catalog
FeatureManufacturer: IXYS Product Category: MOSFET Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 16 A Rds On - Drain-Source Resistance: 300 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: - 2 V Qg - Gate Charge: 199 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 695 W
CategoryIndustrial & Scientific
MPNIXTT16N50D2
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerIXYS
View on Amazon (paid link)
MOSFET D2 Depletion Mode Power MOSFETs (5 pieces)
Brand: IXYS
Catalog
FeatureManufacturer: IXYS Product Category: MOSFET Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 16 A Rds On - Drain-Source Resistance: 300 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: - 2 V Qg - Gate Charge: 199 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 695 W
CategoryIndustrial & Scientific
MPNIXTT16N50D2
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerIXYS
View on Amazon (paid link)
MOSFET D2 Depletion Mode Power MOSFETs (1 piece)
Brand: IXYS
Catalog
FeatureManufacturer: IXYS Product Category: MOSFET Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 16 A Rds On - Drain-Source Resistance: 300 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: - 2 V Qg - Gate Charge: 199 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 695 W
CategoryIndustrial & Scientific
MPNIXTT16N50D2
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerIXYS
View on Amazon (paid link)