Vishay N Channel Mosfet, 40V, 3.9A, To-236, Full Reel - SI2318DS-T1-E3

N CHANNEL MOSFET, 40V, 3.9A, TO-236; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:3.9A; On Resistance Rds(on):0.036ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:20V RoHS Compliant: Yes

VISHAY SILICONIX SI2318DS-T1-E3 N CHANNEL MOSFET, 40V, 3.9A, TO-236, FULL REEL

EU RoHS: Compliant ECCN (US): EAR99 Part Status: NRND HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 40 Maximum Gate Source Voltage (V): ±20 Maximum Continuous Drain Current (A): 3 Maximum Drain Source Resistance (mOhm): 45@10V Typical Gate Charge @ Vgs (nC): 10@10V Typical Gate Charge @ 10V (nC): 10 Typical Input Capacitance @ Vds (pF): 540@20V Maximum Power Dissipation (mW): 1250 Typical Fall Time (ns): 15 Typical Rise Time (ns): 12 Typical Turn-Off Delay Time (ns): 20 Typical Turn-On Delay Time (ns): 5 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Supplier Package: SOT-23 Pin Count: 3 Standard Package Name: SOT Mounting: Surface Mount Package Height: 1.02(Max) Package Length: 3.04(Max) Package Width: 1.4(Max) PCB changed: 3 Lead Shape: Gull-wing