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STMICROELECTRONICS . STI20N65M5

STMICROELECTRONICS . STI20N65M5

Attributes

Brand name, Manufacturer nameSTMICROELECTRONICS
ManufacturerSTMICROELECTRONICS STMicroelectronics
extendedQty, qtyInStock0
moq, multiple1
MPN, Part Number, Keyword, Model, ModelNumber, Model_number, PartNumber, Part_numberSTI20N65M5
qtySourceupdateFromUrlEntry
Product GroupBISS
ASINB07ND33X4F
AdultProduct, Autographed, Batteries_required, Memorabilia, TradeInEligibleFalse
AsinB00LUEDPJS B00LUEDR8M B00LUEDT8K B00LUEDUKW B00LUEDW2I B00M1GQA7I B07ND33X4F
Brand, Label, Man, Publisher, StudioSTMicroelectronics
Case, PackageQuantity1 10 100 5 50 500
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 511-STI20N65M5 X1 MS 511-STI20N65M5 X10 MS 511-STI20N65M5 X100 MS 511-STI20N65M5 X5 MS 511-STI20N65M5 X50 MS 511-STI20N65M5 X500
ClassificationId306919011
DisplayNameMOSFET
Externally_assigned_product_identifier, Identifier7039791556437
FeatureManufacturer: STMicroelectronics RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 25 V Continuous Drain Current: 18 A Drain-Source On Resistance: 160 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: I2PAK Packaging: Tube Fall Time: 7.5 ns Gate Charge Qg: 36 nC
FetchTime1626005280 1651800142 1677770034 1690020397 1714706156
Height400 67
IdentifierTypeEAN
ItemClassificationBASE_PRODUCT
ItemName, Item_nameSTI20N65M5, Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) I2PAK Tube (10 Items)
Item_type_keywordmosfet-transistors
Item_weight0.01
Linkhttps://m.media-amazon.com/images/I/31+7Oxt2D2L._SL75_.jpg https://m.media-amazon.com/images/I/31+7Oxt2D2L.jpg
Marketplace_idATVPDKIKX0DER
NumberOfItems, Number_of_items10
ProductGroupBISS BISS Basic Home Improvement
ProductTypeHARDWARE
ProductTypeNameELECTRONIC_COMPONENT HARDWARE
Product_descriptionSTI20N65M5, Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) I2PAK Tube (10 items)
Product_site_launch_date2019-02-04T17:17:01.926Z
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece 500
Supplier_declared_dg_hz_regulationunknown
TitleMOSFET N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) V (1 piece) MOSFET N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) V (10 pieces) MOSFET N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) V (100 pieces) MOSFET N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) V (5 pieces) MOSFET N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) V (50 pieces) MOSFET N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) V (500 pieces) STI20N65M5, Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) I2PAK Tube (10 Items)
Typeean
URLhttps://m.media-amazon.com/images/I/31+7Oxt2D2L._SL75_.jpg
Unitounces pounds
Unitspixels pounds
VariantMAIN
WebsiteDisplayGroupbiss_basic_display_on_website
WebsiteDisplayGroupNameBISS Basic
Weight0.00 0.000625 0.0440924524000
Width450 75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark06X363111
st.comSTI20N65M51-211 @ $2.29, 10 @ $2.00, 100 @ $1.76, 500 @ $1.63
Digi-Key4156695111 @ $3.61, 10 @ $3.25, 100 @ $2.66, 500 @ $2.27, 1000 @ $1.91, 2000 @ $1.81, 5000 @ $1.75
AmazonSCB07ND33X4F1-211 @ $87.25
HotendaH1822406195511 @ $3.79, 10 @ $3.40, 100 @ $2.79, 500 @ $2.37
Future ElectronicsC013378986100010001000 @ $2.86

Related on Amazon

As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.

MOSFET N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) V (10 pieces)
Brand: STMicroelectronics
Catalog
FeatureManufacturer: STMicroelectronics RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 25 V Continuous Drain Current: 18 A Drain-Source On Resistance: 160 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: I2PAK Packaging: Tube Fall Time: 7.5 ns Gate Charge Qg: 36 nC
CategoryIndustrial & Scientific
MPNSTI20N65M5
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerSTMicroelectronics
View on Amazon (paid link)
MOSFET N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) V (100 pieces)
Brand: STMicroelectronics
Catalog
FeatureManufacturer: STMicroelectronics RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 25 V Continuous Drain Current: 18 A Drain-Source On Resistance: 160 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: I2PAK Packaging: Tube Fall Time: 7.5 ns Gate Charge Qg: 36 nC
CategoryIndustrial & Scientific
MPNSTI20N65M5
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerSTMicroelectronics
View on Amazon (paid link)
MOSFET N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) V (5 pieces)
Brand: STMicroelectronics
Catalog
FeatureManufacturer: STMicroelectronics RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 25 V Continuous Drain Current: 18 A Drain-Source On Resistance: 160 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: I2PAK Packaging: Tube Fall Time: 7.5 ns Gate Charge Qg: 36 nC
CategoryIndustrial & Scientific
MPNSTI20N65M5
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerSTMicroelectronics
View on Amazon (paid link)
MOSFET N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) V (50 pieces)
Brand: STMicroelectronics
Catalog
FeatureManufacturer: STMicroelectronics RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 25 V Continuous Drain Current: 18 A Drain-Source On Resistance: 160 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: I2PAK Packaging: Tube Fall Time: 7.5 ns Gate Charge Qg: 36 nC
CategoryIndustrial & Scientific
MPNSTI20N65M5
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerSTMicroelectronics
View on Amazon (paid link)
MOSFET N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) V (500 pieces)
Brand: STMicroelectronics
Catalog
FeatureManufacturer: STMicroelectronics RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 25 V Continuous Drain Current: 18 A Drain-Source On Resistance: 160 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: I2PAK Packaging: Tube Fall Time: 7.5 ns Gate Charge Qg: 36 nC
CategoryIndustrial & Scientific
MPNSTI20N65M5
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerSTMicroelectronics
View on Amazon (paid link)
MOSFET N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) V (1 piece)
Brand: STMicroelectronics
Catalog
FeatureManufacturer: STMicroelectronics RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 25 V Continuous Drain Current: 18 A Drain-Source On Resistance: 160 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: I2PAK Packaging: Tube Fall Time: 7.5 ns Gate Charge Qg: 36 nC
CategoryIndustrial & Scientific
MPNSTI20N65M5
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerSTMicroelectronics
View on Amazon (paid link)
STI20N65M5, Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) I2PAK Tube (10 Items)
Brand: STMicroelectronics
STI20N65M5, Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) I2PAK Tube (10 items)
Listing
Product groupBISS Basic
Product typeHARDWARE
ModelSTI20N65M5
Part numberSTI20N65M5
Items per pack10
LabelSTMicroelectronics
ManufacturerSTMicroelectronics
View on Amazon (paid link)