Microchip Mosfet, N-Channel Enhancement-Mode, 100V, 0.35 Ohm 3 To-92 Bag Rohs Compliant: Yes - VN2210N3-G

EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.21.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Material: Si Configuration: Single Process Technology: DMOS Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 100 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 2.4 Maximum Continuous Drain Current (A): 1.2 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 50 Maximum Drain Source Resistance (MOhm): 350@10V Typical Input Capacitance @ Vds (pF): 300@25V Maximum Power Dissipation (mW): 740 Typical Fall Time (ns): 30 Typical Rise Time (ns): 10 Typical Turn-Off Delay Time (ns): 50 Typical Turn-On Delay Time (ns): 10 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Bag Supplier Package: TO-92 Pin Count: 3 Standard Package Name: TO-92 Mounting: Through Hole Package Height: 5.33(Max) Package Length: 5.21(Max) Package Width: 4.19(Max) PCB changed: 3