Vishay Channel Type:p Channel - SI6423DQ-T1-E3
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Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 85W2157 | 3000 | 3000 | 1000 @ $1.06 | |
 Radwell | SI6423DQ-T1-E3 | 3000 | 3000 | ||
| 1Source | SI6423DQ-T1-E3 | 1 | 1 | ||
| Digi-Key | 1764898 | 1 | 1 | 1 @ $2.13, 10 @ $1.91, 100 @ $1.54, 500 @ $1.26, 1000 @ $1.08, 3000 @ $1.08 | |
| Win Source | SI6423DQ-T1-E3 | 1 | 1 | 1 | |
| Hotenda | H1807225 | 1 | 6000 | 1 | 1 @ $0.77 |
| Future Electronics | 9021307 | 3000 | 3000 | 3000 @ $1.14 |
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SILICONIX (VISHAY) SI6423DQ-T1-E3 Single P-Channel 12 V 8.5 mOhm Surface Mount TrenchFET Power Mosfet - TSSOP-8 - 3000 item(s)
Brand: SILICONIX (VISHAY)
Single P-Channel 12 V 8.5 mOhm Surface Mount TrenchFET Power Mosfet - TSSOP-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: P-Channel
- VoltageDraintoSource: 12 V
- Drain-sourceOnResistance-Max: 0.0085 Ω
- QgGateCharge: 110 nC
- RatedPowerDissipation(P): 1.05 W
Listing
| Product group | BISS Basic |
|---|---|
| Product type | BISS |
| Model | SI6423DQ-T1-E3 |
| Part number | SI6423DQ-T1-E3 |
| Items per pack | 3000 |
| Label | SILICONIX (VISHAY) |
| Manufacturer | SILICONIX (VISHAY) |
Catalog
| Feature | ChannelType: P-Channel |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI6423DQ-T1-E3 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | SILICONIX (VISHAY) |
Vishay SI6423DQ-T1-E3, Trans MOSFET P-CH 12V 8.2A 8-Pin TSSOP T/R (25 Items)
Brand: Vishay
EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Triple Drain Quad Source Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: P Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 12 Maximum Gate Source Voltage (V): ±8 Maximum Gate Threshold Voltage (V): 0.8 Operating Junction Temperature (°C): -55 to 150 Maximum Continuous Drain Current (A): 8.2 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 1 Maximum Drain Source Resistance (mOhm): 8.5@4.5V Typical Gate Charge @ Vgs (nC): 74@5V Typical Gate to Drain Charge (nC): 19 Typical Gate to Source Charge (nC): 9 Minimum Gate Threshold Voltage (V): 0.4 Typical Output Capacitance (pF): 1599 Maximum Power Dissipation (mW): 1500 Typical Fall Time (ns): 200 Typical Rise Time (ns): 75 Typical Turn-Off Delay Time (ns): 270 Typical Turn-On Delay Time (ns): 50 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Maximum Power Dissipation on PCB @ TC=25°C (W): 1.5 Maximum Pulsed Drain Current @ TC=25°C (A): 30 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 120 Typical Diode Forward Voltage (V): 0.58 Typical Gate Plateau Voltage (V): 1.6 Typical Reverse Recovery Time (ns): 160 Maximum Diode Forward Voltage (V): 1.1 Maximum Positive Gate Source Voltage (V): 8 Maximum Continuous Drain Current on PCB @ TC=25°C (A): 9.5 Supplier Package: TSSOP Pin Count: 8 Standard Package Name: SOP Mounting: Surface Mount Package Height: 1 Package Length: 3 Package Width: 4.4 PCB changed: 8 Lead Shape: Gull-wing