NXP . BF861A,215
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 31AC6263 | 1 | 1 | ||
![]() jotrin.com | JT25-BF861A,215 | 1 | 9000 | 1 | |
![]() Radwell | BF861A,215 | 3000 | 3000 | ||
| Digi-Key | 2774006 | 1 | 1 | ||
| 103-7664 | 1 | 1 | |||
| Win Source | BF861A,215 | 1 | 1 | 1 | |
| Hotenda | H1911782 | 1 | 1 | 1 @ $0.22 |
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Transistors RF JFET TAPE7 FET-RFSS (10 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: JFETs RoHS: Type: Silicon Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 25 V Vgs - Gate-Source Breakdown Voltage: - 25 V Maximum Drain Gate Voltage: 25 V Pd - Power Dissipation: 250 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 Packaging: Reel Brand: NXP Semiconductors |
|---|---|
| Category | Industrial & Scientific |
| MPN | BF861A,215 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
Transistors RF JFET TAPE7 FET-RFSS (100 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: JFETs RoHS: Type: Silicon Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 25 V Vgs - Gate-Source Breakdown Voltage: - 25 V Maximum Drain Gate Voltage: 25 V Pd - Power Dissipation: 250 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 Packaging: Reel Brand: NXP Semiconductors |
|---|---|
| Category | Industrial & Scientific |
| MPN | BF861A,215 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
Transistors RF JFET TAPE7 FET-RFSS (1000 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | <b>Pack of:</b> 1000 |
|---|---|
| Category | Industrial & Scientific |
| MPN | BF861A,215 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
Transistors RF JFET TAPE7 FET-RFSS (5 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: JFETs RoHS: Type: Silicon Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 25 V Vgs - Gate-Source Breakdown Voltage: - 25 V Maximum Drain Gate Voltage: 25 V Pd - Power Dissipation: 250 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 Packaging: Reel Brand: NXP Semiconductors |
|---|---|
| Category | Industrial & Scientific |
| MPN | BF861A,215 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
Transistors RF JFET TAPE7 FET-RFSS (50 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: JFETs RoHS: Type: Silicon Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 25 V Vgs - Gate-Source Breakdown Voltage: - 25 V Maximum Drain Gate Voltage: 25 V Pd - Power Dissipation: 250 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 Packaging: Reel Brand: NXP Semiconductors |
|---|---|
| Category | Industrial & Scientific |
| MPN | BF861A,215 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
Transistors RF JFET TAPE7 FET-RFSS (500 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: JFETs RoHS: Type: Silicon Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 25 V Vgs - Gate-Source Breakdown Voltage: - 25 V Maximum Drain Gate Voltage: 25 V Pd - Power Dissipation: 250 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 Packaging: Reel Brand: NXP Semiconductors |
|---|---|
| Category | Industrial & Scientific |
| MPN | BF861A,215 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | NXP Semiconductors |
Transistors RF JFET TAPE7 FET-RFSS (1 piece)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: JFETs RoHS: Type: Silicon Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 25 V Vgs - Gate-Source Breakdown Voltage: - 25 V Maximum Drain Gate Voltage: 25 V Pd - Power Dissipation: 250 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 Packaging: Reel Brand: NXP Semiconductors |
|---|---|
| Category | Industrial & Scientific |
| MPN | BF861A,215 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |

