Vishay N-Channel 40-V (D-S) Mosfet Rohs Compliant: Yes - SISS10DN-T1-GE3
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Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 20AC3911 | 6000 | 6000 | 6000 @ $0.40, 10000 @ $0.39 | |
| TME | SISS10DN-T1-GE3 | 1 | 1 | 1 @ $1.28, 5 @ $1.15, 25 @ $1.02, 100 @ $0.91, 500 @ $0.85 | |
| Digi-Key | 6133706 | 1 | 1 | 1 @ $1.22, 10 @ $1.09, 100 @ $0.85, 500 @ $0.70, 1000 @ $0.56 | |
| Future Electronics | 6090501 | 6000 | 6000 | 6000 @ $0.38 |
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Vishay SISS10DN-T1-GE3, Trans MOSFET N-CH 40V 60A 8-Pin PowerPAK 1212-S EP T/R (25 Items)
Brand: Vishay
EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Quad Drain Triple Source Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 40 Maximum Gate Source Voltage (V): 20 Maximum Gate Threshold Voltage (V): 2.4 Maximum Continuous Drain Current (A): 60 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 1 Maximum Drain Source Resistance (mOhm): 2.65@10V Typical Gate Charge @ Vgs (nC): 40@4.5V|89@10V Typical Gate Charge @ 10V (nC): 50 Typical Input Capacitance @ Vds (pF): 3750@20V Maximum Power Dissipation (mW): 4800 Typical Fall Time (ns): 7|10 Typical Rise Time (ns): 19|52 Typical Turn-Off Delay Time (ns): 28|23 Typical Turn-On Delay Time (ns): 22|10 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Supplier Package: PowerPAK 1212-S EP Pin Count: 8 Mounting: Surface Mount Package Height: 0.78(Max) Package Length: 3.3 Package Width: 3.3 PCB changed: 8