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IRG8P40N120KD-EPBF International Rectifier | Discrete Semiconductor Products | DigiKey Marketplace

Attributes

Brand name, Manufacturer name, Manufacturer, Attribute01, Brand, Label, Man, Publisher, StudioInternational Rectifier
Attribute00Discrete Semiconductor Products
Attribute02, Attribute05-
Attribute03, packagingBulk
Attribute04Obsolete
Attribute061200 V
Attribute0760 A
Attribute0875 A
Attribute092V @ 15V, 25A
Attribute10305 W
Attribute111.6mJ (on), 1.8mJ (off)
Attribute12Standard
Attribute13240 nC
Attribute1440ns/245ns
Attribute15600V, 25A, 10Ohm, 15V
Attribute1680 ns
Attribute17-40?C ~ 150?C (TJ)
Attribute18Through Hole
Attribute19TO-247-3
Attribute20TO-247AD
AttributeKey00Category
AttributeKey01Mfr
AttributeKey02Series
AttributeKey03Package
AttributeKey04Product Status
AttributeKey05IGBT Type
AttributeKey06Voltage - Collector Emitter Breakdown (Max)
AttributeKey07Current - Collector (Ic) (Max)
AttributeKey08Current - Collector Pulsed (Icm)
AttributeKey09Vce(on) (Max) @ Vge, Ic
AttributeKey10Power - Max
AttributeKey11Switching Energy
AttributeKey12Input Type
AttributeKey13Gate Charge
AttributeKey14Td (on/off) @ 25?C
AttributeKey15Test Condition
AttributeKey16Reverse Recovery Time (trr)
AttributeKey17Operating Temperature
AttributeKey18Mounting Type
AttributeKey19Package / Case
AttributeKey20Supplier Device Package
Extra Product NameIRG8P40N120KD-EPBF International Rectifier | Discrete Semiconductor Products | DigiKey Marketplace
atoms, moq, multiple, Case, NumberOfItems, PackageQuantity1
extraShipping12.0
MPN, Part Number, PartNumberIRG8P40N120KD-EPBF
qtyInStock10475
SKU13520493
snippetIGBT 1200 V 60 A 305 W Through Hole TO-247AD
tierMinQty160
tierPrice15.03000
Product Group, ProductGroup, ProductTypeNameBISS
AsinB0131VBRHO
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
Feature<b>Price For:</b> Each <b>Manufacturer</b>: International Rectifier <b>Product Category</b>: IGBT Transistors <b>RoHS</b>: <b>Configuration</b>: Single <b>Collector- Emitter Voltage VCEO Max</b>: 1200 V <b>Collector-Emitter Saturation Voltage</b>: 1.7 V <b>Maximum Gate Emitter Voltage</b>: 30 V <b>Continuous Collector Current at 25 C</b>: 60 A <b>Gate-Emitter Leakage Current</b>: 200 nA <b>Power Dissipation</b>: 305 W <b>Maximum Operating Temperature</b>: + 150 C
TitleIGBT Transistors 1200V IGBT GEN8

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Digi-Key13520493110475160 @ $5.03
HotendaH185011711

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IGBT Transistors 1200V IGBT GEN8
Brand: International Rectifier
Catalog
Feature<b>Price For:</b> Each <b>Manufacturer</b>: International Rectifier <b>Product Category</b>: IGBT Transistors <b>RoHS</b>: <b>Configuration</b>: Single <b>Collector- Emitter Voltage VCEO Max</b>: 1200 V <b>Collector-Emitter Saturation Voltage</b>: 1.7 V <b>Maximum Gate Emitter Voltage</b>: 30 V <b>Continuous Collector Current at 25 C</b>: 60 A <b>Gate-Emitter Leakage Current</b>: 200 nA <b>Power Dissipation</b>: 305 W <b>Maximum Operating Temperature</b>: + 150 C
CategoryIndustrial & Scientific
MPNIRG8P40N120KD-EPBF
Product groupBISS
Product typeBISS
ManufacturerInternational Rectifier
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