As an Amazon Associate, we earn from qualifying purchases.

STMICROELECTRONICS . SCT50N120

Attributes

Brand name, Manufacturer nameSTMICROELECTRONICS
ManufacturerSTMICROELECTRONICS ST MICROELECTRONICS STMicroelectronics
extendedQty, qtyInStock0
moq, multiple, Case, Item_package_quantity, NumberOfItems, Number_of_items, PackageQuantity1
MPN, Part Number, Keyword, Model, ModelNumber, Model_number, PartNumber, Part_numberSCT50N120
qtySourceupdateFromUrlEntry
Product GroupBISS
ASINB0731QZHLP
AdultProduct, Autographed, Batteries_required, Memorabilia, TradeInEligibleFalse
AsinB01L46T108 B0731QZHLP
Brand, ManSTMicroelectronics
Bullet_pointChannelType: N-Ch Drain-sourceOnResistance-Max: 69 m? QgGateCharge: 122 nC RatedPowerDissipation(P): 318 W VoltageDraintoSource: 1200 V
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161
ClassificationId306506011
DisplayNameIndustrial Electrical
Externally_assigned_product_identifier, Identifier7437236265294
Feature<b>Price For:</b> Each <b>Manufacturer</b>: STMicroelectronics <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Technology</b>: SiC <b>Mounting Style</b>: Through Hole <b>Package / Case</b>: HiP247-3 <b>Number of Channels</b>: 1 Channel <b>Transistor Polarity</b>: N-Channel <b>Vds - Drain-Source Breakdown Voltage</b>: 1.2 kV <b>Id - Continuous Drain Current</b>: 65 A <b>Rds On - Drain-Source Resistance</b>: 52 mOhms <b>Vgs - Gate-Source Voltage</b>: - 10 V to + 25 V
FetchTime1674182955 1690020195 1704368337 1708195763
Height, Width1024 500 75
IdentifierTypeEAN
ItemClassificationBASE_PRODUCT
ItemName, Item_nameST MICROELECTRONICS SCT50N120 N-Channel 1200 V 59 m? 122 nC Silicon Carbide Power Mosfet - HiP247 - 1 item(s)
Item_type_keywordelectronic-components
Item_weight18.19
Label, Publisher, StudioST MICROELECTRONICS STMicroelectronics
Linkhttps://m.media-amazon.com/images/I/31mW6TB1g6L._SL75_.jpg https://m.media-amazon.com/images/I/31mW6TB1g6L.jpg https://m.media-amazon.com/images/I/51burtoIDcL.jpg
Marketplace_idATVPDKIKX0DER
ProductGroupBISS BISS Basic
ProductType, ProductTypeNameELECTRONIC_COMPONENT
Product_descriptionN-Channel 1200 V 59 m? 122 nC Silicon Carbide Power Mosfet - HiP247 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Product_site_launch_date2017-06-21T18:27:47.782Z
Supplier_declared_dg_hz_regulationunknown
TitleMOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package ST MICROELECTRONICS SCT50N120 N-Channel 1200 V 59 m? 122 nC Silicon Carbide Power Mosfet - HiP247 - 1 item(s)
Typeean
URLhttps://m.media-amazon.com/images/I/31mW6TB1g6L._SL75_.jpg
Unitgrams pounds
Unitspixels pounds
VariantMAIN
WebsiteDisplayGroupbiss_basic_display_on_website
WebsiteDisplayGroupNameBISS Basic
Weight0.0401020854578

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark38AH910311
TMESCT50N12014911 @ $39.83, 3 @ $37.14, 10 @ $36.01
st.comSCT50N120111 @ $35.97
Digi-Key6137191136111 @ $47.66, 10 @ $43.96, 100 @ $37.54
RS Delivers202-5478111 @ $37.24
Win SourceSCT50N12011131
Future Electronics1073656600600600 @ $60.94, 2 @ $58.09, 5 @ $54.51, 10 @ $51.95, 25 @ $48.76

Related on Amazon

As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.

MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package
Brand: STMicroelectronics
Catalog
Feature<b>Price For:</b> Each <b>Manufacturer</b>: STMicroelectronics <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Technology</b>: SiC <b>Mounting Style</b>: Through Hole <b>Package / Case</b>: HiP247-3 <b>Number of Channels</b>: 1 Channel <b>Transistor Polarity</b>: N-Channel <b>Vds - Drain-Source Breakdown Voltage</b>: 1.2 kV <b>Id - Continuous Drain Current</b>: 65 A <b>Rds On - Drain-Source Resistance</b>: 52 mOhms <b>Vgs - Gate-Source Voltage</b>: - 10 V to + 25 V
CategoryIndustrial & Scientific
MPNSCT50N120
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerSTMicroelectronics
View on Amazon (paid link)
ST MICROELECTRONICS SCT50N120 N-Channel 1200 V 59 m? 122 nC Silicon Carbide Power Mosfet - HiP247 - 1 item(s)
Brand: STMicroelectronics
N-Channel 1200 V 59 m? 122 nC Silicon Carbide Power Mosfet - HiP247 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
  • ChannelType: N-Ch
  • VoltageDraintoSource: 1200 V
  • Drain-sourceOnResistance-Max: 69 m?
  • QgGateCharge: 122 nC
  • RatedPowerDissipation(P): 318 W
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
ModelSCT50N120
Part numberSCT50N120
Items per pack1
LabelST MICROELECTRONICS
ManufacturerST MICROELECTRONICS
View on Amazon (paid link)