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VISHAY SIRA36DP-T1-GE3 | Transistor: N-MOSFET

VISHAY . SIRA36DP-T1-GE3

Attributes

Brand name, Manufacturer name, Attribute00VISHAY
ManufacturerVISHAY Vishay / Siliconix
Attribute01N-MOSFET
AttributeKey00Manufacturer
AttributeKey01Type of transistor
CategoryL1Semiconductors
CategoryL2Transistors
CategoryL3Unipolar transistors
CategoryL4N channel transistors
Extra Product NameVISHAY SIRA36DP-T1-GE3 | Transistor: N-MOSFET
atoms, moq, multiple, tierMinQty1, Case, NumberOfItems, PackageQuantity1
jsonUrlData2a25196f56bdc574fed5cae0e551cf80.
jsonUrlData2288c17ee21748b9e926a
keywordsVISHAY, SIRA36DP-T1-GE3, Semiconductors, Transistors, Unipolar transistors, N channel transistors, SMD N channel transistors
MPN, SKU, Part Number, PartNumberSIRA36DP-T1-GE3
qtyInStock0
snippetVISHAY SIRA36DP-T1-GE3 | Transistor: N-MOSFE
tierMinQty25
tierMinQty325
tierMinQty4100
tierMinQty5500
tierPrice10.771
tierPrice20.476
tierPrice30.428
tierPrice40.378
tierPrice50.34
Product Group, ProductGroupBISS
AsinB00HKZ535K
Brand, Label, Man, Publisher, StudioVishay / Siliconix
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
Feature<b>Manufacturer</b>: Vishay <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Transistor Polarity</b>: N-Channel <b>Drain-Source Breakdown Voltage</b>: 30 V <b>Gate-Source Breakdown Voltage</b>: + 20 V, - 16 V <b>Continuous Drain Current</b>: 40 A <b>Drain-Source On Resistance</b>: 2.8 mOhms <b>Configuration</b>: Single <b>Maximum Operating Temperature</b>: + 150 C <b>Mounting Style</b>: SMD/SMT <b>Package / Case</b>: PowerPAK SO-8 <b>Packaging</b>: Reel <b>Fall Time</b>: 9 ns
ProductTypeNameELECTRONIC_COMPONENT
TitleMOSFET 30V 2.8mOhm@10V 40A N-Ch G-IV

Distributor offers

SellerSKUMOQIn stockMultiplePrices
TMESIRA36DP-T1-GE3111 @ $0.77, 5 @ $0.48, 25 @ $0.43, 100 @ $0.38, 500 @ $0.34
Digi-Key4327745111 @ $0.71, 10 @ $0.63, 100 @ $0.48, 500 @ $0.38, 1000 @ $0.30, 3000 @ $0.28
HotendaH1825822111 @ $0.22

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MOSFET 30V 2.8mOhm@10V 40A N-Ch G-IV
Brand: Vishay / Siliconix
Catalog
Feature<b>Manufacturer</b>: Vishay <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Transistor Polarity</b>: N-Channel <b>Drain-Source Breakdown Voltage</b>: 30 V <b>Gate-Source Breakdown Voltage</b>: + 20 V, - 16 V <b>Continuous Drain Current</b>: 40 A <b>Drain-Source On Resistance</b>: 2.8 mOhms <b>Configuration</b>: Single <b>Maximum Operating Temperature</b>: + 150 C <b>Mounting Style</b>: SMD/SMT <b>Package / Case</b>: PowerPAK SO-8 <b>Packaging</b>: Reel <b>Fall Time</b>: 9 ns
CategoryIndustrial & Scientific
MPNSIRA36DP-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
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