As an Amazon Associate, we earn from qualifying purchases.

Infineon . IPG20N06S2L-50

Gallery

Attributes

Brand name, Manufacturer name, Attribute04Infineon
ManufacturerInfineon Infineon Technologies
Attribute00+175 °C
Attribute01, moq, multiple1
Attribute025.15mm
Attribute03Single
Attribute0520 A
Attribute06TDSON
Attribute0751 W
Attribute08Surface Mount
Attribute09-55 °C
Attribute105.9mm
Attribute112.2V
Attribute121mm
Attribute131.2V
Attribute1460 m?
Attribute15, AttributeKey15Maximum Drain Source Voltage
Attribute16, AttributeKey16Pin Count
Attribute17, AttributeKey17Typical Gate Charge @ Vgs
Attribute18, AttributeKey18Transistor Material
Attribute19, AttributeKey19Channel Mode
Attribute20, AttributeKey20Channel Type
Attribute21, AttributeKey21Maximum Gate Source Voltage
Attribute22, AttributeKey22Stock
AttributeKey00Maximum Operating Temperature
AttributeKey01Number of Elements per Chip
AttributeKey02Length
AttributeKey03Transistor Configuration
AttributeKey04Brand
AttributeKey05Maximum Continuous Drain Current
AttributeKey06Package Type
AttributeKey07Maximum Power Dissipation
AttributeKey08Mounting Type
AttributeKey09Minimum Operating Temperature
AttributeKey10Width
AttributeKey11Maximum Gate Threshold Voltage
AttributeKey12Height
AttributeKey13Minimum Gate Threshold Voltage
AttributeKey14Maximum Drain Source Resistance
jsonUrlData8275283
MPN, Part Number, PartNumberIPG20N06S2L-50
SKU827-5283
Product Group, ProductGroupBISS
AsinB00LWOL9L2 B00LWOLC0A B00LWOLF9I B00LWOLI0E B00LWOLKCK B00LWOLP8Y B00M2DSCIK
Brand, Label, Man, Publisher, StudioInfineon Technologies
Case, PackageQuantity1 10 100 1000 5 50 500
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 726-IPG20N06S2L-50 X1 MS 726-IPG20N06S2L-50 X10 MS 726-IPG20N06S2L-50 X100 MS 726-IPG20N06S2L-50 X5 MS 726-IPG20N06S2L-50 X50 MS 726-IPG20N06S2L-50 X500
Feature<b>Pack of:</b> 1000 Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 20 A Rds On - Drain-Source Resistance: 50 mOhms Configuration: Dual Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 51 W Mounting Style: SMD/SMT Package / Case: TDSON-8
NumberOfItems1000
ProductTypeNameBISS ELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 1000 pack 5 Piece 50 Piece 500
TitleMOSFET Dual N-Ch 55V MOSFET (1 piece) MOSFET Dual N-Ch 55V MOSFET (10 pieces) MOSFET Dual N-Ch 55V MOSFET (100 pieces) MOSFET Dual N-Ch 55V MOSFET (1000 pieces) MOSFET Dual N-Ch 55V MOSFET (5 pieces) MOSFET Dual N-Ch 55V MOSFET (50 pieces) MOSFET Dual N-Ch 55V MOSFET (500 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
RS Delivers827-528311
swatee.comIPG20N06S2L-501433511 @ $1.68
Win SourceIPG20N06S2L-501294281
HotendaH180114611
iodPartsIPG20N06S2L-5011

Related on Amazon

As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.

MOSFET Dual N-Ch 55V MOSFET (10 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 20 A Rds On - Drain-Source Resistance: 50 mOhms Configuration: Dual Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 51 W Mounting Style: SMD/SMT Package / Case: TDSON-8
CategoryIndustrial & Scientific
MPNIPG20N06S2L-50
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET Dual N-Ch 55V MOSFET (100 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 20 A Rds On - Drain-Source Resistance: 50 mOhms Configuration: Dual Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 51 W Mounting Style: SMD/SMT Package / Case: TDSON-8
CategoryIndustrial & Scientific
MPNIPG20N06S2L-50
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET Dual N-Ch 55V MOSFET (1000 pieces)
Brand: Infineon Technologies
Catalog
Feature<b>Pack of:</b> 1000
CategoryIndustrial & Scientific
MPNIPG20N06S2L-50
Product groupBISS
Product typeBISS
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET Dual N-Ch 55V MOSFET (5 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 20 A Rds On - Drain-Source Resistance: 50 mOhms Configuration: Dual Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 51 W Mounting Style: SMD/SMT Package / Case: TDSON-8
CategoryIndustrial & Scientific
MPNIPG20N06S2L-50
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET Dual N-Ch 55V MOSFET (50 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 20 A Rds On - Drain-Source Resistance: 50 mOhms Configuration: Dual Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 51 W Mounting Style: SMD/SMT Package / Case: TDSON-8
CategoryIndustrial & Scientific
MPNIPG20N06S2L-50
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET Dual N-Ch 55V MOSFET (500 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 20 A Rds On - Drain-Source Resistance: 50 mOhms Configuration: Dual Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 51 W Mounting Style: SMD/SMT Package / Case: TDSON-8
CategoryIndustrial & Scientific
MPNIPG20N06S2L-50
Product groupBISS
Product typeBISS
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET Dual N-Ch 55V MOSFET (1 piece)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 20 A Rds On - Drain-Source Resistance: 50 mOhms Configuration: Dual Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 51 W Mounting Style: SMD/SMT Package / Case: TDSON-8
CategoryIndustrial & Scientific
MPNIPG20N06S2L-50
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)