Infineon . IPG20N06S2L-50
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| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
![]() RS Delivers | 827-5283 | 1 | 1 | ||
![]() swatee.com | IPG20N06S2L-50 | 1 | 4335 | 1 | 1 @ $1.68 |
| Win Source | IPG20N06S2L-50 | 1 | 29428 | 1 | |
| Hotenda | H1801146 | 1 | 1 | ||
| iodParts | IPG20N06S2L-50 | 1 | 1 |
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MOSFET Dual N-Ch 55V MOSFET (10 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 20 A Rds On - Drain-Source Resistance: 50 mOhms Configuration: Dual Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 51 W Mounting Style: SMD/SMT Package / Case: TDSON-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPG20N06S2L-50 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET Dual N-Ch 55V MOSFET (100 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 20 A Rds On - Drain-Source Resistance: 50 mOhms Configuration: Dual Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 51 W Mounting Style: SMD/SMT Package / Case: TDSON-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPG20N06S2L-50 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET Dual N-Ch 55V MOSFET (1000 pieces)
Brand: Infineon Technologies
Catalog
| Feature | <b>Pack of:</b> 1000 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPG20N06S2L-50 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Infineon Technologies |
MOSFET Dual N-Ch 55V MOSFET (5 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 20 A Rds On - Drain-Source Resistance: 50 mOhms Configuration: Dual Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 51 W Mounting Style: SMD/SMT Package / Case: TDSON-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPG20N06S2L-50 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET Dual N-Ch 55V MOSFET (50 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 20 A Rds On - Drain-Source Resistance: 50 mOhms Configuration: Dual Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 51 W Mounting Style: SMD/SMT Package / Case: TDSON-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPG20N06S2L-50 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET Dual N-Ch 55V MOSFET (500 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 20 A Rds On - Drain-Source Resistance: 50 mOhms Configuration: Dual Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 51 W Mounting Style: SMD/SMT Package / Case: TDSON-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPG20N06S2L-50 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Infineon Technologies |
MOSFET Dual N-Ch 55V MOSFET (1 piece)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 20 A Rds On - Drain-Source Resistance: 50 mOhms Configuration: Dual Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 51 W Mounting Style: SMD/SMT Package / Case: TDSON-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPG20N06S2L-50 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
