Vishay Mosfet, P Channel, -20V, -25A, Powerpak-8 - SIS407DN-T1-GE3

EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Quad Drain Triple Source Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: P Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 20 Maximum Gate Source Voltage (V): ±8 Maximum Continuous Drain Current (A): 25 Maximum Drain Source Resistance (mOhm): 9.5@4.5V Typical Gate Charge @ Vgs (nC): 62.5@8V|38@4.5V Typical Input Capacitance @ Vds (pF): 2760@10V Maximum Power Dissipation (mW): 3600 Typical Fall Time (ns): 38 Typical Rise Time (ns): 28 Typical Turn-Off Delay Time (ns): 92 Typical Turn-On Delay Time (ns): 23 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Supplier Package: PowerPAK 1212 Pin Count: 8 Standard Package Name: PowerPAK 1212 Mounting: Surface Mount Package Height: 1.07(Max) Package Length: 3.05 Package Width: 3.05 PCB changed: 8 Lead Shape: No Lead