As an Amazon Associate, we earn from qualifying purchases.

Vishay Siliconix . SIA411DJ-T1-E3

Vishay Siliconix . SIA411DJ-T1-E3

Attributes

Brand name, Manufacturer nameVishay Siliconix
ManufacturerVishay Siliconix Vishay / Siliconix
extendedQty, qtyInStock0
moq, multiple1
MPN, Part Number, PartNumberSIA411DJ-T1-E3
qtySourceupdateFromUrlEntry
Product Group, ProductGroupBISS
AsinB00LWQ70JA B00LWQ725M B00LWQ73BU B00LWQ74G4 B00LWQ75O0 B00M2EYNO6 B00SRVDM40 B00SRVDPBK B00SRVDRRM
BrandVishay / Siliconix
Case, PackageQuantity1 10 100 5 50 500
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 781-SIA411DJ-T1-E3 X1 MS 781-SIA411DJ-T1-E3 X10 MS 781-SIA411DJ-T1-E3 X100 MS 781-SIA411DJ-T1-E3 X5 MS 781-SIA411DJ-T1-E3 X50 MS 781-SIA411DJ-T1-E3 X500
FeatureManufacturer: Vishay Product Category: P-Channel MOSFETs RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: +/- 8 V Id - Continuous Drain Current: 8.8 A Rds On - Drain-Source Resistance: 30 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 3.5 W Mounting Style: SMD/SMT u"<b>Minimum Quantity:</b> 1 <b>Packaging:</b> Cut Tape (CT) <b>Series:</b> TrenchFET\xc3'\xc2\xae <b>FET Type:</b> MOSFET P-Channel, Metal Oxide <b>FET Feature:</b> Logic Level Gate <b>Drain to Source Voltage (Vdss):</b> 20V <b>Current - Continuous Drain (Id) @ 25\xc3'\xc2\xb0C:</b> 12A (Tc) <b>Rds On (Max) @ Id, Vgs:</b> 30 mOhm @ 5.9A, 4.5V <b>Vgs(th) (Max) @ Id:</b> 1V @ 250\xc3'\xc2\xb5A <b>Gate Charge (Qg) @ Vgs:</b> 38nC @ 8V <b>Input Capacitance (Ciss) @ Vds:</b> 1200pF @ 10V <b>Power - Max:</b> 19W"
Label, Man, Publisher, StudioVishay / Siliconix Vishay Siliconix
NumberOfItems1 10 100
ProductTypeNameBISS ELECTRONIC_COMPONENT
Size1 Piece 1 pack 10 Piece 10 pack 100 Piece 100 pack 5 Piece 50 Piece 500
TitleMOSFET 20V 12A 19W 30mohm @ 4.5V (1 piece) MOSFET 20V 12A 19W 30mohm @ 4.5V (10 pieces) MOSFET 20V 12A 19W 30mohm @ 4.5V (100 pieces) MOSFET 20V 12A 19W 30mohm @ 4.5V (5 pieces) MOSFET 20V 12A 19W 30mohm @ 4.5V (50 pieces) MOSFET 20V 12A 19W 30mohm @ 4.5V (500 pieces) MOSFET P-CH 20V 12A SC70-6 (1 piece) MOSFET P-CH 20V 12A SC70-6 (10 pieces) MOSFET P-CH 20V 12A SC70-6 (100 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark75M525011
RadwellSIA411DJ-T1-E330003000
1SourceSIA411DJ-T1-E311
Digi-Key165719911
swatee.comSIA411DJ-T1-E31145711 @ $1.86
Win SourceSIA411DJ-T1-E3111941
HotendaH183462011

Related on Amazon

As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.

MOSFET 20V 12A 19W 30mohm @ 4.5V (10 pieces)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: P-Channel MOSFETs RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: +/- 8 V Id - Continuous Drain Current: 8.8 A Rds On - Drain-Source Resistance: 30 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 3.5 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSIA411DJ-T1-E3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET 20V 12A 19W 30mohm @ 4.5V (100 pieces)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: P-Channel MOSFETs RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: +/- 8 V Id - Continuous Drain Current: 8.8 A Rds On - Drain-Source Resistance: 30 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 3.5 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSIA411DJ-T1-E3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET 20V 12A 19W 30mohm @ 4.5V (5 pieces)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: P-Channel MOSFETs RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: +/- 8 V Id - Continuous Drain Current: 8.8 A Rds On - Drain-Source Resistance: 30 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 3.5 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSIA411DJ-T1-E3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET 20V 12A 19W 30mohm @ 4.5V (50 pieces)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: P-Channel MOSFETs RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: +/- 8 V Id - Continuous Drain Current: 8.8 A Rds On - Drain-Source Resistance: 30 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 3.5 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSIA411DJ-T1-E3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET 20V 12A 19W 30mohm @ 4.5V (500 pieces)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: P-Channel MOSFETs RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: +/- 8 V Id - Continuous Drain Current: 8.8 A Rds On - Drain-Source Resistance: 30 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 3.5 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSIA411DJ-T1-E3
Product groupBISS
Product typeBISS
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET 20V 12A 19W 30mohm @ 4.5V (1 piece)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: P-Channel MOSFETs RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: +/- 8 V Id - Continuous Drain Current: 8.8 A Rds On - Drain-Source Resistance: 30 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 3.5 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSIA411DJ-T1-E3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET P-CH 20V 12A SC70-6 (1 piece)
Brand: Vishay / Siliconix
Catalog
Featureu"<b>Minimum Quantity:</b> 1 <b>Packaging:</b> Cut Tape (CT) <b>Series:</b> TrenchFET\xc3'\xc2\xae <b>FET Type:</b> MOSFET P-Channel, Metal Oxide <b>FET Feature:</b> Logic Level Gate <b>Drain to Source Voltage (Vdss):</b> 20V <b>Current - Continuous Drain (Id) @ 25\xc3'\xc2\xb0C:</b> 12A (Tc) <b>Rds On (Max) @ Id, Vgs:</b> 30 mOhm @ 5.9A, 4.5V <b>Vgs(th) (Max) @ Id:</b> 1V @ 250\xc3'\xc2\xb5A <b>Gate Charge (Qg) @ Vgs:</b> 38nC @ 8V <b>Input Capacitance (Ciss) @ Vds:</b> 1200pF @ 10V <b>Power - Max:</b> 19W"
CategoryIndustrial & Scientific
MPNSIA411DJ-T1-E3
Product groupBISS
Product typeBISS
ManufacturerVishay Siliconix
View on Amazon (paid link)
MOSFET P-CH 20V 12A SC70-6 (10 pieces)
Brand: Vishay / Siliconix
Catalog
Featureu"<b>Minimum Quantity:</b> 1 <b>Packaging:</b> Cut Tape (CT) <b>Series:</b> TrenchFET\xc3'\xc2\xae <b>FET Type:</b> MOSFET P-Channel, Metal Oxide <b>FET Feature:</b> Logic Level Gate <b>Drain to Source Voltage (Vdss):</b> 20V <b>Current - Continuous Drain (Id) @ 25\xc3'\xc2\xb0C:</b> 12A (Tc) <b>Rds On (Max) @ Id, Vgs:</b> 30 mOhm @ 5.9A, 4.5V <b>Vgs(th) (Max) @ Id:</b> 1V @ 250\xc3'\xc2\xb5A <b>Gate Charge (Qg) @ Vgs:</b> 38nC @ 8V <b>Input Capacitance (Ciss) @ Vds:</b> 1200pF @ 10V <b>Power - Max:</b> 19W"
CategoryIndustrial & Scientific
MPNSIA411DJ-T1-E3
Product groupBISS
Product typeBISS
ManufacturerVishay Siliconix
View on Amazon (paid link)
MOSFET P-CH 20V 12A SC70-6 (100 pieces)
Brand: Vishay / Siliconix
Catalog
Featureu"<b>Minimum Quantity:</b> 1 <b>Packaging:</b> Cut Tape (CT) <b>Series:</b> TrenchFET\xc3'\xc2\xae <b>FET Type:</b> MOSFET P-Channel, Metal Oxide <b>FET Feature:</b> Logic Level Gate <b>Drain to Source Voltage (Vdss):</b> 20V <b>Current - Continuous Drain (Id) @ 25\xc3'\xc2\xb0C:</b> 12A (Tc) <b>Rds On (Max) @ Id, Vgs:</b> 30 mOhm @ 5.9A, 4.5V <b>Vgs(th) (Max) @ Id:</b> 1V @ 250\xc3'\xc2\xb5A <b>Gate Charge (Qg) @ Vgs:</b> 38nC @ 8V <b>Input Capacitance (Ciss) @ Vds:</b> 1200pF @ 10V <b>Power - Max:</b> 19W"
CategoryIndustrial & Scientific
MPNSIA411DJ-T1-E3
Product groupBISS
Product typeBISS
ManufacturerVishay Siliconix
View on Amazon (paid link)