Vishay Dual N Channel Mosfet, 100V, Powerpak - SI7922DN-T1-E3
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Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
![]() Newark | 06J8182 | 3000 | 3000 | 250 @ $1.14 | |
| JT25-SI7922DN-T1-E3 | 1 | 33618 | 1 | ||
| us.rs-online.com | 70026293 | 3000 | 3000 | 3000 @ $0.96, 6000 @ $0.95, 9000 @ $0.90 | |
| Allied Electronics | 70026293 | 3000 | 3000 | ||
![]() Radwell | SI7922DN-T1-E3 | 1 | 42 | 1 | |
| 1Source | SI7922DN-T1-E3 | 1 | 1 | ||
| Digi-Key | 1765005 | 1 | 1 | 1 @ $2.13, 10 @ $1.91, 100 @ $1.54, 500 @ $1.26, 1000 @ $1.08 | |
![]() swatee.com | SI7922DN-T1-E3 | 1 | 1556 | 1 | 1 @ $2.92 |
| 872-3073 | 1 | 1 | |||
| Win Source | SI7922DN-T1-E3 | 1 | 1 | 1 | |
| Future Electronics | 3464047 | 3000 | 3000 | 3000 @ $0.67 |
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MOSFET DUAL N-CH 100V (D-S) (1 piece)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Dual MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 1.8 A Rds On - Drain-Source Resistance: 195 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.3 W Mounting Style: SMD/SMT Package / Case: PowerPAK 1212-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7922DN-T1-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET DUAL N-CH 100V (D-S) (10 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Dual MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 1.8 A Rds On - Drain-Source Resistance: 195 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.3 W Mounting Style: SMD/SMT Package / Case: PowerPAK 1212-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7922DN-T1-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET DUAL N-CH 100V (D-S) (100 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Dual MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 1.8 A Rds On - Drain-Source Resistance: 195 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.3 W Mounting Style: SMD/SMT Package / Case: PowerPAK 1212-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7922DN-T1-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET DUAL N-CH 100V (D-S) (5 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Dual MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 1.8 A Rds On - Drain-Source Resistance: 195 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.3 W Mounting Style: SMD/SMT Package / Case: PowerPAK 1212-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7922DN-T1-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET DUAL N-CH 100V (D-S) (50 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Dual MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 1.8 A Rds On - Drain-Source Resistance: 195 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.3 W Mounting Style: SMD/SMT Package / Case: PowerPAK 1212-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7922DN-T1-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET DUAL N-CH 100V (D-S) (500 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Dual MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 1.8 A Rds On - Drain-Source Resistance: 195 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.3 W Mounting Style: SMD/SMT Package / Case: PowerPAK 1212-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7922DN-T1-E3 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Vishay / Siliconix |
SILICONIX (VISHAY) SI7922DN-T1-E3 Dual N-Channel 100 V 0.195 Ohms Surface Mount Power Mosfet - PowerPAK 1212-8 - 3000 item(s)
Brand: SILICONIX (VISHAY)
Dual N-Channel 100 V 0.195 Ohms Surface Mount Power Mosfet - PowerPAK 1212-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: Dual N-Channel
- VoltageDraintoSource: 100 V
- Drain-sourceOnResistance-Max: 0.195 ?
- QgGateCharge: 8 nC
- RatedPowerDissipation(P): 1.3 W
Listing
| Product group | BISS |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | SI7922DN-T1-E3 |
| Part number | SI7922DN-T1-E3 |
| Items per pack | 3000 |
| Label | SILICONIX (VISHAY) |
| Manufacturer | SILICONIX (VISHAY) |
SI7922DN-T1-E3, Trans MOSFET N-CH 100V 1.8A 8-Pin PowerPAK 1212 T/R (25 Items)
Brand: Vishay
EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.10.00.80 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Dual Dual Drain Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 2 Maximum Drain Source Voltage (V): 100 Maximum Gate Source Voltage (V): ±20 Operating Junction Temperature (°C): -55 to 150 Maximum Continuous Drain Current (A): 1.8 Maximum Drain Source Resistance (mOhm): 195@10V Typical Gate Charge @ Vgs (nC): 5.2@10V Typical Gate Charge @ 10V (nC): 5.2 Maximum Power Dissipation (mW): 1300 Typical Fall Time (ns): 11 Typical Rise Time (ns): 11 Typical Turn-Off Delay Time (ns): 8 Typical Turn-On Delay Time (ns): 7 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Supplier Package: PowerPAK 1212 Pin Count: 8 Standard Package Name: PowerPAK 1212 Mounting: Surface Mount Package Height: 1.07(Max) Package Length: 3.05 Package Width: 3.05 PCB changed: 8 Lead Shape: No Lead
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | SI7922DN-T1-E3 |
| Part number | SI7922DN-T1-E3 |
| Items per pack | 25 |
| Label | Vishay |
| Manufacturer | Vishay |

