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Vishay Dual N Channel Mosfet, 100V, Powerpak - SI7922DN-T1-E3

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Attributes

Brand name, Manufacturer nameVISHAY
ManufacturerVISHAY SILICONIX (VISHAY) Vishay Vishay / Siliconix
CategoryL1Semiconductors - Discretes
CategoryL2FETs
CategoryL3Dual MOSFETs
Extra Product NameVishay Dual N Channel Mosfet, 100V, Powerpak - SI7922DN-T1-E3
jsonUrlDataSemiconductors - Discretes > FETs > Dual MOSFETs
moq, multiple3000
MPN, Part Number, Keyword, Model, ModelNumber, Model_number, PartNumber, Part_numberSI7922DN-T1-E3
qtyInStock0
SKU06J8182
tierMinQty1250
tierPrice11.14
urlhttps://www.newark.com/06J8182?CMP=AFC-DATAALCHEMY
Product GroupBISS
ASINB078Z1NSTG B09T5MKPP7
AdultProduct, Autographed, Memorabilia, TradeInEligibleFalse
AsinB00HKHV1IQ B00LWQ8LHU B00LWQ8MR4 B00LWQ8O2W B00LWQ8Q52 B00LWQ8RQK B078Z1NSTG B09T5MKPP7
Brand, Label, Publisher, StudioSILICONIX (VISHAY) Vishay Vishay / Siliconix
Bullet_pointChannelType: Dual N-Channel Drain-sourceOnResistance-Max: 0.195 ? QgGateCharge: 8 nC RatedPowerDissipation(P): 1.3 W VoltageDraintoSource: 100 V
Case, PackageQuantity1 10 100 5 50 500
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 781-SI7922DN-T1-E3 X1 MS 781-SI7922DN-T1-E3 X10 MS 781-SI7922DN-T1-E3 X100 MS 781-SI7922DN-T1-E3 X5 MS 781-SI7922DN-T1-E3 X50 MS 781-SI7922DN-T1-E3 X500
ClassificationId306919011
DisplayNameMOSFET
Externally_assigned_product_identifier, Identifier6098040237290
FeatureManufacturer: Vishay Product Category: Dual MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 1.8 A Rds On - Drain-Source Resistance: 195 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.3 W Mounting Style: SMD/SMT Package / Case: PowerPAK 1212-8
FetchTime1679946555 1714808998
Height150 243 56 75
IdentifierTypeEAN
ItemClassificationBASE_PRODUCT
ItemName, Item_nameSI7922DN-T1-E3, Trans MOSFET N-CH 100V 1.8A 8-Pin PowerPAK 1212 T/R (25 Items) SILICONIX (VISHAY) SI7922DN-T1-E3 Dual N-Channel 100 V 0.195 Ohms Surface Mount Power Mosfet - PowerPAK 1212-8 - 3000 item(s)
Item_package_quantity1
Item_type_keywordmosfet-transistors
Item_weight0.26
Linkhttps://m.media-amazon.com/images/I/11bRdXjDgTL._SL75_.jpg https://m.media-amazon.com/images/I/11bRdXjDgTL.jpg https://m.media-amazon.com/images/I/215Q3kIOnxL._SL75_.jpg https://m.media-amazon.com/images/I/215Q3kIOnxL.jpg
ManVishay / Siliconix
Marketplace_idATVPDKIKX0DER
NumberOfItems, Number_of_items25 3000
ProductGroup, WebsiteDisplayGroupNameBISS BISS Basic
ProductTypeELECTRONIC_COMPONENT
ProductTypeNameBISS ELECTRONIC_COMPONENT
Product_descriptionDual N-Channel 100 V 0.195 Ohms Surface Mount Power Mosfet - PowerPAK 1212-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image ***** EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.10.00.80 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Dual Dual Drain Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 2 Maximum Drain Source Voltage (V): 100 Maximum Gate Source Voltage (V): ±20 Operating Junction Temperature (°C): -55 to 150 Maximum Continuous Drain Current (A): 1.8 Maximum Drain Source Resistance (mOhm): 195@10V Typical Gate Charge @ Vgs (nC): 5.2@10V Typical Gate Charge @ 10V (nC): 5.2 Maximum Power Dissipation (mW): 1300 Typical Fall Time (ns): 11 Typical Rise Time (ns): 11 Typical Turn-Off Delay Time (ns): 8 Typical Turn-On Delay Time (ns): 7 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Supplier Package: PowerPAK 1212 Pin Count: 8 Standard Package Name: PowerPAK 1212 Mounting: Surface Mount Package Height: 1.07(Max) Package Length: 3.05 Package Width: 3.05 PCB changed: 8 Lead Shape: No Lead
Product_site_launch_date2018-01-12T21:38:02.350Z 2020-07-23T20:53:18.035Z
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece 500
TitleMOSFET DUAL N-CH 100V (D-S) (1 piece) MOSFET DUAL N-CH 100V (D-S) (10 pieces) MOSFET DUAL N-CH 100V (D-S) (100 pieces) MOSFET DUAL N-CH 100V (D-S) (5 pieces) MOSFET DUAL N-CH 100V (D-S) (50 pieces) MOSFET DUAL N-CH 100V (D-S) (500 pieces) SI7922DN-T1-E3, Trans MOSFET N-CH 100V 1.8A 8-Pin PowerPAK 1212 T/R (25 Items) SILICONIX (VISHAY) SI7922DN-T1-E3 Dual N-Channel 100 V 0.195 Ohms Surface Mount Power Mosfet - PowerPAK 1212-8 - 3000 item(s)
Typeean
URLhttps://m.media-amazon.com/images/I/11bRdXjDgTL._SL75_.jpg https://m.media-amazon.com/images/I/215Q3kIOnxL._SL75_.jpg
Unitgrams pounds
Unitspixels pounds
VariantMAIN
WebsiteDisplayGroupbiss_basic_display_on_website biss_display_on_website
Weight0.0005732018812
Width150 323 75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark06J818230003000250 @ $1.14
jotrin.comJT25-SI7922DN-T1-E31336181
us.rs-online.com70026293300030003000 @ $0.96, 6000 @ $0.95, 9000 @ $0.90
Allied Electronics7002629330003000
RadwellSI7922DN-T1-E31421
1SourceSI7922DN-T1-E311
Digi-Key1765005111 @ $2.13, 10 @ $1.91, 100 @ $1.54, 500 @ $1.26, 1000 @ $1.08
swatee.comSI7922DN-T1-E31155611 @ $2.92
RS Delivers872-307311
Win SourceSI7922DN-T1-E3111
Future Electronics3464047300030003000 @ $0.67

Related on Amazon

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MOSFET DUAL N-CH 100V (D-S) (1 piece)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: Dual MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 1.8 A Rds On - Drain-Source Resistance: 195 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.3 W Mounting Style: SMD/SMT Package / Case: PowerPAK 1212-8
CategoryIndustrial & Scientific
MPNSI7922DN-T1-E3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET DUAL N-CH 100V (D-S) (10 pieces)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: Dual MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 1.8 A Rds On - Drain-Source Resistance: 195 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.3 W Mounting Style: SMD/SMT Package / Case: PowerPAK 1212-8
CategoryIndustrial & Scientific
MPNSI7922DN-T1-E3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET DUAL N-CH 100V (D-S) (100 pieces)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: Dual MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 1.8 A Rds On - Drain-Source Resistance: 195 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.3 W Mounting Style: SMD/SMT Package / Case: PowerPAK 1212-8
CategoryIndustrial & Scientific
MPNSI7922DN-T1-E3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET DUAL N-CH 100V (D-S) (5 pieces)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: Dual MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 1.8 A Rds On - Drain-Source Resistance: 195 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.3 W Mounting Style: SMD/SMT Package / Case: PowerPAK 1212-8
CategoryIndustrial & Scientific
MPNSI7922DN-T1-E3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET DUAL N-CH 100V (D-S) (50 pieces)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: Dual MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 1.8 A Rds On - Drain-Source Resistance: 195 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.3 W Mounting Style: SMD/SMT Package / Case: PowerPAK 1212-8
CategoryIndustrial & Scientific
MPNSI7922DN-T1-E3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET DUAL N-CH 100V (D-S) (500 pieces)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: Dual MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 1.8 A Rds On - Drain-Source Resistance: 195 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.3 W Mounting Style: SMD/SMT Package / Case: PowerPAK 1212-8
CategoryIndustrial & Scientific
MPNSI7922DN-T1-E3
Product groupBISS
Product typeBISS
ManufacturerVishay / Siliconix
View on Amazon (paid link)
SILICONIX (VISHAY) SI7922DN-T1-E3 Dual N-Channel 100 V 0.195 Ohms Surface Mount Power Mosfet - PowerPAK 1212-8 - 3000 item(s)
Brand: SILICONIX (VISHAY)
Dual N-Channel 100 V 0.195 Ohms Surface Mount Power Mosfet - PowerPAK 1212-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
  • ChannelType: Dual N-Channel
  • VoltageDraintoSource: 100 V
  • Drain-sourceOnResistance-Max: 0.195 ?
  • QgGateCharge: 8 nC
  • RatedPowerDissipation(P): 1.3 W
Listing
Product groupBISS
Product typeELECTRONIC_COMPONENT
ModelSI7922DN-T1-E3
Part numberSI7922DN-T1-E3
Items per pack3000
LabelSILICONIX (VISHAY)
ManufacturerSILICONIX (VISHAY)
View on Amazon (paid link)
SI7922DN-T1-E3, Trans MOSFET N-CH 100V 1.8A 8-Pin PowerPAK 1212 T/R (25 Items)
Brand: Vishay
EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.10.00.80 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Dual Dual Drain Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 2 Maximum Drain Source Voltage (V): 100 Maximum Gate Source Voltage (V): ±20 Operating Junction Temperature (°C): -55 to 150 Maximum Continuous Drain Current (A): 1.8 Maximum Drain Source Resistance (mOhm): 195@10V Typical Gate Charge @ Vgs (nC): 5.2@10V Typical Gate Charge @ 10V (nC): 5.2 Maximum Power Dissipation (mW): 1300 Typical Fall Time (ns): 11 Typical Rise Time (ns): 11 Typical Turn-Off Delay Time (ns): 8 Typical Turn-On Delay Time (ns): 7 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Supplier Package: PowerPAK 1212 Pin Count: 8 Standard Package Name: PowerPAK 1212 Mounting: Surface Mount Package Height: 1.07(Max) Package Length: 3.05 Package Width: 3.05 PCB changed: 8 Lead Shape: No Lead
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
ModelSI7922DN-T1-E3
Part numberSI7922DN-T1-E3
Items per pack25
LabelVishay
ManufacturerVishay
View on Amazon (paid link)