NEXPERIA . PSMN063-150D,118
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 35AH5092 | 1 | 1 | ||
![]() Radwell | PSMN063-150D,118 | 10000 | 10000 | ||
| Digi-Key | 5221952 | 1 | 1 | ||
| Digi-Key | 10480630 | 1 | 1 | ||
| Amazon | B07CGN7WCR | 1 | 1 | ||
| Win Source | PSMN063-150D,118 | 1 | 34350 | 1 | |
| Hotenda | H1819265 | 1 | 7500 | 1 | 1 @ $0.71 |
| Rochester Electronics | PSMN063-150D118 | 4590 | 1 @ $0.96, 25 @ $0.89, 100 @ $0.85, 500 @ $0.82, 1000 @ $0.78 | ||
| Abacus Technologies | PSMN063-150D118 | 8987 |
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MOSFET TAPE13 PWR-MOS (10 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFETs - Arrays RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 150 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 29 A Rds On - Drain-Source Resistance: 63 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 150 W Mounting Style: SMD/SMT Package / Case: SOT-428-3 |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN063-150D,118 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET TAPE13 PWR-MOS (100 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFETs - Arrays RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 150 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 29 A Rds On - Drain-Source Resistance: 63 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 150 W Mounting Style: SMD/SMT Package / Case: SOT-428-3 |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN063-150D,118 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET TAPE13 PWR-MOS (5 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFETs - Arrays RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 150 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 29 A Rds On - Drain-Source Resistance: 63 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 150 W Mounting Style: SMD/SMT Package / Case: SOT-428-3 |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN063-150D,118 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET TAPE13 PWR-MOS (50 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFETs - Arrays RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 150 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 29 A Rds On - Drain-Source Resistance: 63 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 150 W Mounting Style: SMD/SMT Package / Case: SOT-428-3 |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN063-150D,118 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET TAPE13 PWR-MOS (500 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFETs - Arrays RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 150 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 29 A Rds On - Drain-Source Resistance: 63 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 150 W Mounting Style: SMD/SMT Package / Case: SOT-428-3 |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN063-150D,118 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | NXP Semiconductors |
MOSFET TAPE13 PWR-MOS (1 piece)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFETs - Arrays RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 150 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 29 A Rds On - Drain-Source Resistance: 63 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 150 W Mounting Style: SMD/SMT Package / Case: SOT-428-3 |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN063-150D,118 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
NEXPERIA PSMN063-150D,118 PSMN063 Series 150 V 63 mOhm 150 W N-Ch Enhancement Mode Transistor - TO-252-3 - 2500 item(s)
Brand: NEXPERIA
PSMN063 Series 150 V 63 mOhm 150 W N-Ch Enhancement Mode Transistor - TO-252-3 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
