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VISHAY . SI5906DU-T1-GE3

VISHAY . SI5906DU-T1-GE3

Attributes

Brand name, Manufacturer nameVISHAY
ManufacturerVISHAY Vishay / Siliconix
extendedQty, qtyInStock0
moq, multiple1
MPN, Part Number, PartNumberSI5906DU-T1-GE3
qtySourceupdateFromUrlEntry
Product Group, ProductGroupBISS
AsinB00LWQEJNK B00LWQEKSO B00LWQEM00 B00LWQENBS B00M2EO0NK
Brand, Label, Man, Publisher, StudioVishay / Siliconix
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 781-SI5906DU-GE3 X1 MS 781-SI5906DU-GE3 X10 MS 781-SI5906DU-GE3 X100 MS 781-SI5906DU-GE3 X5 MS 781-SI5906DU-GE3 X50
FeatureManufacturer: Vishay Product Category: Dual MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 6 A Rds On - Drain-Source Resistance: 40 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 10.4 W Mounting Style: SMD/SMT
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece
TitleMOSFET 30V 6.0A 10.4W 31mohm @ 10V (1 piece) MOSFET 30V 6.0A 10.4W 31mohm @ 10V (10 pieces) MOSFET 30V 6.0A 10.4W 31mohm @ 10V (100 pieces) MOSFET 30V 6.0A 10.4W 31mohm @ 10V (5 pieces) MOSFET 30V 6.0A 10.4W 31mohm @ 10V (50 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark35R624411
1SourceSI5906DU-T1-GE311
RadwellSI5906DU-T1-GE330003000
Digi-Key330548311
swatee.comSI5906DU-T1-GE3137311 @ $0.61
Win SourceSI5906DU-T1-GE3160001
HotendaH180009311
Future Electronics5020304300030003000 @ $0.26

Related on Amazon

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MOSFET 30V 6.0A 10.4W 31mohm @ 10V (10 pieces)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: Dual MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 6 A Rds On - Drain-Source Resistance: 40 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 10.4 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSI5906DU-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET 30V 6.0A 10.4W 31mohm @ 10V (100 pieces)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: Dual MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 6 A Rds On - Drain-Source Resistance: 40 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 10.4 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSI5906DU-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET 30V 6.0A 10.4W 31mohm @ 10V (5 pieces)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: Dual MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 6 A Rds On - Drain-Source Resistance: 40 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 10.4 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSI5906DU-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET 30V 6.0A 10.4W 31mohm @ 10V (50 pieces)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: Dual MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 6 A Rds On - Drain-Source Resistance: 40 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 10.4 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSI5906DU-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET 30V 6.0A 10.4W 31mohm @ 10V (1 piece)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: Dual MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 6 A Rds On - Drain-Source Resistance: 40 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 10.4 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSI5906DU-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)