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PDTC114TE SemiConductor - CASE: SOT416 MAKE: Philips

Philips . PDTC114TE

Attributes

Brand name, Manufacturer name, Manufacturer, Attribute02Philips
Attribute00SOT416
Attribute01Transistor Silicon Pre-Biased-NPN
Attribute03Pre-Biased-NPN
Attribute040.15 W
Attribute05, Attribute0650 V
Attribute075 V
Attribute080.1 A
Attribute09150 ?C
Attribute102.5 pF
Attribute11200
Attribute1224
Attribute1310 kOhm
Attribute14563861
AttributeKey00Case
AttributeKey01Type
AttributeKey02Manufacturer
AttributeKey03Polarity
AttributeKey04Maximum Collector Power Dissipation (Pc)
AttributeKey05Maximum Collector-Base Voltage |Vcb|
AttributeKey06Maximum Collector-Emitter Voltage |Vce|
AttributeKey07Maximum Emitter-Base Voltage |Veb|
AttributeKey08Maximum Collector Current |Ic max|
AttributeKey09Max. Operating Junction Temperature (Tj)
AttributeKey10Collector Capacitance (Cc)
AttributeKey11Forward Current Transfer Ratio (hFE), MIN
AttributeKey12SMD Transistor Code
AttributeKey13Built in Bias Resistor R1
AttributeKey14SKU
keywordsBuy PDTC114TE, PDTC114TE, PDTC114TE SI-NPN-DIGI
moq, multiple1
MPN, SKUPDTC114TE
originalCurrency{'currency': 'GBP'}
qtyInStock0
snippetPDTC114TE SemiConductor - CASE: SOT416 MAKE: Philips

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Little DiodePDTC114TE11
Win SourcePDTC114TE13869751