Nexperia Pmdxb600Une/sot1216/dfn1010B-6 Rohs Compliant: Yes - PMDXB600UNEZ
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 35AH4788 | 15000 | 15000 | 10000 @ $0.06, 20000 @ $0.06, 30000 @ $0.06, 50000 @ $0.06 | |
| TME | PMDXB600UNEZ | 1 | 1 | ||
![]() Digi-Key | 4448887 | 1 | 51856 | 1 | 1 @ $0.58, 10 @ $0.42, 100 @ $0.24, 500 @ $0.16, 1000 @ $0.12, 2000 @ $0.11 |
| RS Delivers | 151-3049 | 1 | 1 | 1 @ $0.10 | |
| AmazonSC | B07W3PT22N | 1 | -2 | 1 | 1 @ $68.20 |
| iodParts | PMDXB600UNEZ | 10000 | 15000 | 10000 | 10000 @ $0.08 |
| Win Source | PMDXB600UNEZ | 1 | 326 | 1 | |
| Hotenda | H4289997 | 1 | 30695 | 1 | 1 @ $0.59, 10 @ $0.50, 100 @ $0.38, 500 @ $0.30 |
| Digi-Key | 568-12564-1-ND | 1 | 1 | 1 @ $0.59, 10 @ $0.50, 100 @ $0.37, 500 @ $0.29, 1000 @ $0.23 |
Related on Amazon
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MOSFET 20 V, dual N-channel Trench MOSFET (1 piece)
Brand: NXP Semiconductors
Catalog
| Feature | <b>Price For:</b> Pack of 1 <b>Manufacturer</b>: NXP <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 600 mA, 600 mA <b>Vds - Drain-Source Breakdown Voltage</b>: 20 V, 20 V <b>Rds On - Drain-Source Resistance</b>: 3 Ohms, 3 Ohms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: +/- 8 V, +/- 8 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 450 mV, 450 mV <b>Qg - Gate Charge</b>: 0.4 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | PMDXB600UNEZ |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | NXP Semiconductors |
MOSFET 20 V, dual N-channel Trench MOSFET (10 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | <b>Price For:</b> Pack of 10 <b>Manufacturer</b>: NXP <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 600 mA, 600 mA <b>Vds - Drain-Source Breakdown Voltage</b>: 20 V, 20 V <b>Rds On - Drain-Source Resistance</b>: 3 Ohms, 3 Ohms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: +/- 8 V, +/- 8 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 450 mV, 450 mV <b>Qg - Gate Charge</b>: 0.4 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | PMDXB600UNEZ |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | NXP Semiconductors |
MOSFET 20 V, dual N-channel Trench MOSFET (100 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | <b>Price For:</b> Pack of 100 <b>Manufacturer</b>: NXP <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 600 mA, 600 mA <b>Vds - Drain-Source Breakdown Voltage</b>: 20 V, 20 V <b>Rds On - Drain-Source Resistance</b>: 3 Ohms, 3 Ohms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: +/- 8 V, +/- 8 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 450 mV, 450 mV <b>Qg - Gate Charge</b>: 0.4 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | PMDXB600UNEZ |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | NXP Semiconductors |
MOSFET 20 V, dual N-channel Trench MOSFET (5 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | <b>Price For:</b> Pack of 5 <b>Manufacturer</b>: NXP <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 600 mA, 600 mA <b>Vds - Drain-Source Breakdown Voltage</b>: 20 V, 20 V <b>Rds On - Drain-Source Resistance</b>: 3 Ohms, 3 Ohms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: +/- 8 V, +/- 8 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 450 mV, 450 mV <b>Qg - Gate Charge</b>: 0.4 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | PMDXB600UNEZ |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | NXP Semiconductors |
MOSFET 20 V, dual N-channel Trench MOSFET (50 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | <b>Price For:</b> Pack of 50 <b>Manufacturer</b>: NXP <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 600 mA, 600 mA <b>Vds - Drain-Source Breakdown Voltage</b>: 20 V, 20 V <b>Rds On - Drain-Source Resistance</b>: 3 Ohms, 3 Ohms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: +/- 8 V, +/- 8 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 450 mV, 450 mV <b>Qg - Gate Charge</b>: 0.4 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | PMDXB600UNEZ |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | NXP Semiconductors |
PMDXB600UNEZ, Trans MOSFET N-CH 20V 0.6A 6-Pin DFN-B EP T/R (50 Items)
Brand: NEXPERIA
PMDXB600UNEZ, Trans MOSFET N-CH 20V 0.6A 6-Pin DFN-B EP T/R (50 items)
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | PMDXB600UNEZ |
| Part number | PMDXB600UNEZ |
| Items per pack | 50 |
| Label | Nexperia |
| Manufacturer | Nexperia |
Catalog
| Category | Industrial & Scientific |
|---|---|
| MPN | PMDXB600UNEZ |
| EAN | 6400660715162 |
| Product group | BISS Basic |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Nexperia |
