As an Amazon Associate, we earn from qualifying purchases.

Vishay Channel Type:n Channel - SI2316DS-T1-E3

VISHAY . SI2316DS-T1-E3

Gallery

Attributes

Brand name, Manufacturer nameVISHAY
ManufacturerVISHAY SILICONIX (VISHAY) Vishay Vishay / Siliconix
CategoryL1Semiconductors - Discretes
CategoryL2FETs
CategoryL3Single MOSFETs
Extra Product NameVishay Channel Type:n Channel - SI2316DS-T1-E3
jsonUrlDataSemiconductors - Discretes > FETs > Single MOSFETs
moq, multiple, NumberOfItems3000
MPN, Part Number, Keyword, Model, ModelNumber, Model_number, PartNumber, Part_numberSI2316DS-T1-E3
qtyInStock0
SKU85W2139
tierMinQty11000
tierPrice10.706
urlhttps://www.newark.com/85W2139?CMP=AFC-DATAALCHEMY
Product Group, ProductTypeNameBISS
ASINB0731QBQHT
AdultProduct, Autographed, Memorabilia, TradeInEligibleFalse
AsinB00LWQMI7E B0731QBQHT B08DJZQSFP
BrandSILICONIX (VISHAY) Vishay Vishay / Siliconix
Bullet_pointChannelType: N-Channel Drain-sourceOnResistance-Max: 0.05 Ω QgGateCharge: 7 nC RatedPowerDissipation(P): 0.7 W VoltageDraintoSource: 30 V
Case3000 500
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 781-SI2316DS-T1-E3 X500
ClassificationId306506011
DisplayNameIndustrial Electrical
Externally_assigned_product_identifier, Identifier6019256276262
FeatureChannelType: N-Channel Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 2.9 A Rds On - Drain-Source Resistance: 50 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 700 mW Mounting Style: SMD/SMT Package / Case: SOT-23-3
FetchTime1625722718 1651495645 1683626002 1704470387
Height150 243 56 75
IdentifierTypeEAN
ItemClassificationBASE_PRODUCT
ItemName, Item_nameSI2316DS-T1-E3, Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R (50 Items) SILICONIX (VISHAY) SI2316DS-T1-E3 Single N-Channel 30 V 0.05 Ohms Surface Mount Power Mosfet - TO-236 - 3000 item(s)
Item_package_quantity1
Item_type_keywordelectronic-components
Item_weight0.08
Label, Man, Publisher, StudioSILICONIX (VISHAY) Vishay / Siliconix
Linkhttps://m.media-amazon.com/images/I/11lRKcbiwZL._SL75_.jpg https://m.media-amazon.com/images/I/11lRKcbiwZL.jpg https://m.media-amazon.com/images/I/21eyDoYHZVL._SL75_.jpg https://m.media-amazon.com/images/I/21eyDoYHZVL.jpg
Marketplace_idATVPDKIKX0DER
Number_of_items3000 50
PackageQuantity1 500
ProductGroupBISS BISS Basic
ProductTypeBISS ELECTRONIC_COMPONENT
Product_descriptionSI2316DS-T1-E3, Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R (50 items) Single N-Channel 30 V 0.05 Ohms Surface Mount Power Mosfet - TO-236 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Product_site_launch_date2017-06-21T18:28:22.129Z 2020-07-23T20:53:16.512Z
Size500
TitleMOSFET 30V 3.4A 0.96W 50mohm @ 10V (500 pieces) SILICONIX (VISHAY) SI2316DS-T1-E3 Single N-Channel 30 V 0.05 Ohms Surface Mount Power Mosfet - TO-236 - 3000 item(s)
Typeean
URLhttps://m.media-amazon.com/images/I/11lRKcbiwZL._SL75_.jpg
Unitgrams pounds
Unitspixels pounds
VariantMAIN
WebsiteDisplayGroupbiss_basic_display_on_website
WebsiteDisplayGroupNameBISS Basic
Weight0.0001763698096
Width150 323 75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark85W2139300030001000 @ $0.71
4 Star ElectronicsSI2316DST1E311
TMESI2316DS-T1-E311
1SourceSI2316DS-T1-E311
RadwellSI2316DS-T1-E330003000
Digi-Key1656347111 @ $0.99, 10 @ $0.87, 100 @ $0.67, 500 @ $0.53, 1000 @ $0.42
HotendaH18066961300011 @ $0.22
Future Electronics84172973000300030003000 @ $0.34

Related on Amazon

As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.

MOSFET 30V 3.4A 0.96W 50mohm @ 10V (500 pieces)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 2.9 A Rds On - Drain-Source Resistance: 50 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 700 mW Mounting Style: SMD/SMT Package / Case: SOT-23-3
CategoryIndustrial & Scientific
MPNSI2316DS-T1-E3
Product groupBISS
Product typeBISS
ManufacturerVishay / Siliconix
View on Amazon (paid link)
SILICONIX (VISHAY) SI2316DS-T1-E3 Single N-Channel 30 V 0.05 Ohms Surface Mount Power Mosfet - TO-236 - 3000 item(s)
Brand: SILICONIX (VISHAY)
Single N-Channel 30 V 0.05 Ohms Surface Mount Power Mosfet - TO-236 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
  • ChannelType: N-Channel
  • VoltageDraintoSource: 30 V
  • Drain-sourceOnResistance-Max: 0.05 Ω
  • QgGateCharge: 7 nC
  • RatedPowerDissipation(P): 0.7 W
Listing
Product groupBISS Basic
Product typeBISS
ModelSI2316DS-T1-E3
Part numberSI2316DS-T1-E3
Items per pack3000
LabelSILICONIX (VISHAY)
ManufacturerSILICONIX (VISHAY)
Catalog
FeatureChannelType: N-Channel
CategoryIndustrial & Scientific
MPNSI2316DS-T1-E3
Product groupBISS
Product typeBISS
ManufacturerSILICONIX (VISHAY)
View on Amazon (paid link)
SI2316DS-T1-E3, Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R (50 Items)
Brand: Vishay
SI2316DS-T1-E3, Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R (50 items)
View on Amazon (paid link)